Power Semiconductor Module Protrusion Design
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Solution Overview
Problem
Power semiconductor chips in vehicles face challenges with heat dissipation and ensuring withstand voltage in peripheral components, particularly in high-capacity on-board motors used in electric and hybrid vehicles.
Innovation Solution
A power semiconductor module design featuring a semiconductor chip sandwiched between heat sinks with a unique arrangement of heat dissipation surfaces and metal plating, along with a manufacturing method that includes metal plating bonded to solder material on protrusion surfaces, enhances heat dissipation and withstand voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a spacer or lead frame is used to ensure withstand voltage in peripheral components, then electrical insulation is improved, but heat dissipation efficiency deteriorates
Solution Approach 1:
The conductor plate is divided into multiple protrusion sections, each serving different functions: some sections provide electrical insulation (ensuring withstand voltage) while others are optimized for heat dissipation. This segmentation allows simultaneous achievement of both electrical reliability and thermal performance without requiring separate spacer components.
Solution Approach 2:
The conductor plate performs multiple functions simultaneously: it provides electrical connection, ensures withstand voltage through protrusion sections, and dissipates heat through thermally conductive sections. This multi-functionality eliminates the need for separate spacer components and integrates both electrical insulation and heat dissipation into a single structure.
2Reliability
If metal plating is applied to enhance withstand voltage, then electrical insulation is improved, but manufacturing complexity increases
Solution Approach 1:
The protrusion sections that ensure withstand voltage are integrated directly into the conductor plate structure during the same manufacturing process, rather than being added as separate components. This merging of functions into a single manufacturing step reduces overall complexity while maintaining electrical insulation performance.
3Temperature
If heat dissipation surfaces are expanded, then heat dissipation efficiency is improved, but the space for control electrodes is reduced
Solution Approach 1:
Different regions of the conductor plate are assigned different properties: protrusion sections are optimized for electrical insulation and control electrode placement, while other sections are optimized for heat dissipation. This local differentiation allows both heat dissipation efficiency and control electrode space to be maximized simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves heat dissipation and ensures reliable withstand voltage in power semiconductor modules, addressing the challenges of high heat emission and voltage integrity in vehicle power conversion systems.
Implementation Method 1
the heat dissipating efficiency of the power semiconductor chip will vary according to how the spacer or the lead frame, convey the heat emitted from the power semiconductor chip
Implementation Method 2
the first process in a power semiconductor module manufacturing method of the fourth aspect preferably includes a process to coat metal plating bonded to the solder material on the first protrusion surface
Data Source
Figure 1
Figure 2
Figure 3(a)~3(b)
AI summary
A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.