Power Semiconductor Module Temperature Sensor Arrangement
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Solution Overview
Problem
Power semiconductor module arrangements face imprecision in temperature monitoring due to the distance of single temperature sensors from semiconductor devices, and adding multiple sensors is not feasible due to space and cost constraints.
Innovation Solution
A temperature sensor arrangement with a temperature sensor thermally and electrically coupled to semiconductor dies via a large cross-sectional connection piece and electrically coupled to a sense terminal via a thinner connection piece, allowing for accurate temperature monitoring without increasing the module's size or cost, by using a substrate with a dielectric insulation layer and metallization layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single temperature sensor is used to monitor the power semiconductor module arrangement, then the device complexity and space requirements are reduced, but the measurement precision deteriorates because the sensor is located at a significant distance from the semiconductor devices
Solution Approach 1:
The patent introduces a substrate with metallization layers as an intermediary thermal conduction path. The substrate acts as a mediator that thermally couples the temperature sensor to the semiconductor devices through the metallization layers, enabling accurate temperature measurement without requiring the sensor to be in direct contact with the devices. This resolves the contradiction by providing precise temperature monitoring while maintaining a simple single-sensor configuration.
2Measurement precision
If multiple temperature sensors are used within one power semiconductor module arrangement, then the measurement precision improves, but the device complexity and space requirements increase significantly
Solution Approach 1:
The substrate with metallization layers serves multiple functions simultaneously: it provides electrical connections for the semiconductor devices, acts as a thermal conduction path for temperature sensing, and serves as a mechanical support structure. This multi-functionality allows a single temperature sensor to effectively monitor temperatures of multiple semiconductor devices without increasing device complexity or requiring additional specialized components.
3Measurement precision
If multiple temperature sensors and their electrical connections are added, then the measurement precision improves, but the area occupied within the power semiconductor module arrangement increases
Solution Approach 1:
The patent merges the temperature sensing function with the existing substrate and metallization layer structure. The substrate and its metallization layers, which are already necessary for electrical connections and mechanical support, are utilized as the thermal conduction path for temperature sensing. This merging eliminates the need for separate thermal conduction structures that would occupy additional space, allowing precise temperature monitoring without increasing the module area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides precise temperature monitoring of semiconductor dies, preventing overheating and reducing the risk of failure, while maintaining a compact and cost-effective design.
Implementation Method 1
a first connection piece, thermally and electrically coupling the temperature sensor to one of the at least one semiconductor die
Implementation Method 2
a first connection piece, thermally and electrically coupling the temperature sensor to one of the at least one semiconductor die
Data Source
Figure 1~2
Figure 3~4
Figure 5
AI summary
A power semiconductor module arrangement (100) comprises a substrate (10) comprising a dielectric insulation layer (11), and a first metallization layer (111) arranged on a first side of the dielectric insulation layer (11), at least one semiconductor die (20) mounted on the first metallization layer (111) of the substrate (10), and at least one temperature sensor arrangement. Each of the at least one temperature sensor arrangement comprises a temperature sensor (210), a first connection piece (32), thermally and electrically coupling the temperature sensor (210) to one of the at least one semiconductor die (20), and a second connection piece (34), electrically coupling the temperature sensor (210) to a first sense terminal element (42). A maximum dimension of a cross-section of the first connection piece (32) of each of the at least one temperature sensor arrangement is greater than a maximum dimension of a cross-section of the respective second connection piece (34).