Power Semiconductor Trench with Displaced Electrodes
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Solution Overview
Problem
Power semiconductor devices with trench structures face challenges in efficiently configuring multiple electrodes within a trench to control load current effectively, particularly in achieving spatial separation and insulation between gate and field electrodes, which affects their performance in high voltage and current applications.
Innovation Solution
A method of processing power semiconductor devices involves creating a trench with a monolithic electrode zone that is divided into separate and electrically insulated first and second electrode structures within the trench, using a single deposition step to form these structures, ensuring they are spatially displaced along multiple directions to avoid overlap and common extension ranges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple electrodes are arranged separately within a trench to enable independent control, then the control precision and functionality are improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent divides a single monolithic electrode zone into multiple separate electrode structures (gate electrode and field electrode) within the trench. This segmentation enables independent control of each electrode while maintaining their spatial relationship, thus improving control precision without requiring completely separate fabrication processes
Solution Approach 2:
The patent combines multiple electrode structures within a single trench structure and uses a single deposition step to form all electrode zones. This merging approach reduces manufacturing complexity by integrating multiple functions into a unified structure that can be fabricated in one process step
2Reliability
If electrodes are spatially separated and insulated from each other, then the electrical insulation and control independence are improved, but the manufacturing precision requirements increase
Solution Approach 1:
The patent introduces an insulator as an intermediary material between the gate electrode and field electrode within the trench. This insulator ensures electrical isolation between the two electrodes while allowing them to be formed in close proximity through a single deposition process, thus maintaining reliability without excessive precision requirements
Solution Approach 2:
The patent arranges electrode structures to be spatially displaced not only laterally but also along the extension direction of the trench. This multi-dimensional spatial arrangement ensures that electrodes do not overlap and are properly insulated, reducing the precision burden on any single dimensional constraint
3Productivity
If a single deposition step is used to form multiple electrode zones, then the productivity and manufacturing efficiency are improved, but the difficulty of achieving precise spatial arrangement increases
Solution Approach 1:
The patent forms a complete monolithic electrode zone in a single deposition step before any subdivision occurs. This preliminary formation of the unified electrode structure simplifies the deposition process, while subsequent subdivision into separate electrode structures is achieved through simpler removal or patterning steps
Data Source
AI summary
According to an embodiment of a power semiconductor device, the device includes a semiconductor body coupled to a first load terminal and a second load terminal and configured to conduct a load current between the first load terminal and the second load terminal. A trench extends into the semiconductor body along an extension direction and includes an insulator. A first electrode structure included in the trench is configured to control the load current. A second electrode structure included in the trench is arranged separately and electrically insulated from the first electrode structure. The first electrode structure and the second electrode structure are spatially displaced from each other along the extension direction such that they do not have a common extension range along the extension direction. Each of the first electrode structure and the second electrode structure is made of a metal.