Power Semiconductor Aging Detection via Ultrasonic Heat Sink Sensing
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Solution Overview
Problem
Existing methods for detecting aging-related damage in power semiconductor devices are inaccurate due to the complexity and errors associated with measuring indirect thermal or electrical variables.
Innovation Solution
A power semiconductor device equipped with ultrasonic sensors and MEMS sensors positioned on opposite sides of a heat sink, allowing direct measurement of structural and connection degradation through ultrasonic signal transmission and reception, with evaluation against reference values to determine damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If indirect thermal or electrical variables are measured to detect aging, then the detection can be performed, but the measurement complexity increases and accuracy decreases
Solution Approach 1:
The patent replaces complex thermal and electrical measurement systems with ultrasonic measurement systems. Ultrasonic sensors transmit ultrasonic waves through the semiconductor device structure, and the reflected or transmitted waves are analyzed to detect aging-related damage such as cracks and contact losses. This substitution simplifies the measurement approach while improving accuracy by directly probing the mechanical integrity of the device structure.
Solution Approach 2:
The patent introduces ultrasonic waves as an intermediary medium to detect aging damage. Instead of directly measuring complex thermal or electrical parameters, the ultrasonic waves interact with the device structure (acting as a mediator), and the changes in wave propagation characteristics reveal information about aging-related damage. This intermediary approach simplifies the measurement process while maintaining high detection accuracy.
2Measurement precision
If multiple sensors are distributed to monitor transmission paths, then damage location precision improves, but device complexity increases
Solution Approach 1:
The patent divides the monitoring system into multiple distributed ultrasonic sensors positioned at different locations on the semiconductor device. Each sensor independently monitors its local transmission path, and the combined data from all sensors enables precise localization of aging-related damage. This segmentation approach improves measurement precision by providing multiple measurement perspectives while keeping each individual sensor simple.
Solution Approach 2:
The patent adds spatial distribution as a new dimension to the monitoring system. By positioning ultrasonic sensors at multiple locations (adding a spatial dimension), the system can triangulate and precisely locate damage sources. This dimensional expansion enables accurate damage localization without requiring complex sensor designs, as each sensor operates independently in its own spatial position.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise and cost-effective detection of aging-related damage by monitoring transmission paths and locating damage accurately within the device.
Implementation Method 1
transmitting ultrasonic signals by way of the at least one ultrasonic sensor
Implementation Method 2
receiving ultrasonic signals by way of the at least one MEMS sensor
Data Source
AI summary
A power semiconductor device. The power semiconductor device includes a heat sink and three half-bridge modules, which are each arranged on the heat sink by way of a connecting region. The power semiconductor device includes at least one ultrasonic sensor and at least one MEMS sensor, wherein the at least one ultrasonic sensor and the at least one MEMS sensor are arranged on opposite sides of the heat sink.