Integrated Power Substrate Layout for Lower Eddy Current Loss
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Solution Overview
Problem
Switching power supplies face challenges with high eddy current loss due to high-frequency currents flowing through planar magnetic elements, requiring larger PCB areas and increased costs, especially in complex topologies where multiple PCB layers are needed to connect switching devices and filter capacitors effectively.
Innovation Solution
The integration of power transistors, filter capacitors, and diodes on an integrated substrate with a packaging module that includes simple pads for connection, allowing for reduced PCB layers and minimizing eddy current loss by stacking integrated circuit modules with intermediate metal layers and penetrating connection structures, thereby reducing the AC loop area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple PCB layers are used to connect switching devices and filter capacitors in complex topologies, then the electrical connections can be achieved, but the eddy current loss increases and the PCB area and cost increase
Solution Approach 1:
The patent combines multiple electrical connections into a single integrated substrate where power transistors, filter capacitors, and diodes are all mounted on the same substrate. This merging eliminates the need for multiple separate PCB layers and reduces the number of connection terminals, thereby reducing eddy current loss while maintaining reliable electrical connections.
Solution Approach 2:
The patent transitions from a planar multi-layer PCB architecture to a three-dimensional integrated substrate architecture. By stacking multiple electronic components on a single substrate rather than distributing them across multiple PCB layers, the design reduces the AC loop area and minimizes eddy current effects while achieving all necessary electrical connections.
2Reliability
If multiple PCB layers are used to connect switching devices and filter capacitors, then the electrical connections can be achieved, but the PCB area and production cost increase
Solution Approach 1:
The patent merges multiple electrical connection functions into a single integrated substrate, eliminating the need for multiple separate PCB layers. This consolidation reduces the overall PCB area required while maintaining all necessary electrical connections between power transistors, filter capacitors, and diodes.
Solution Approach 2:
The patent employs a three-dimensional integrated substrate design that stacks electronic components vertically rather than spreading them out across multiple horizontal PCB layers. This dimensional transition significantly reduces the footprint area while achieving the same electrical connectivity.
3Reliability
If multiple PCB layers are used to connect switching devices and filter capacitors, then the electrical connections can be achieved, but the production cost increases
Solution Approach 1:
The patent combines multiple electrical connection functions into a single integrated substrate, reducing the complexity of the PCB assembly process. By eliminating the need for multiple PCB layers and reducing the number of connection terminals, the manufacturing process becomes simpler and less costly while maintaining reliable electrical connections.
Solution Approach 2:
The transition to a three-dimensional integrated substrate architecture simplifies the manufacturing process by reducing the number of PCB layers that need to be manufactured and assembled. This dimensional change reduces production complexity and cost while achieving all necessary electrical connections.
Data Source
AI summary
An integrated substrate can include: a top structure having a plurality of first pads for mounting electronic devices, where each of the first pads is electrically coupled with a corresponding electronic device, such that each of the first pads has a corresponding potential; a bottom structure having a plurality of second pads for coupling with peripheral circuits; a plurality of intermediate metal layers stacked up/down and located between the top structure and the bottom structure; a first type of penetrating connection structures configured to couple the intermediate metal layers and a part of the first pads, such that the intermediate metal layers have the same potential as the part of the first pads; and a second type of penetrating connection structures configured to couple the intermediate metal layers and the second pads, such that the second pads have the same potential as the part of the first pads.