Power Switch Temperature Sense Circuit ESD Protection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Power semiconductor devices face challenges with Electrostatic Discharge (ESD) robustness and Electric Over Stress (EOS) due to floating potential in temperature sense diodes, leading to potential damage from high voltage transients during transient switching operations.
Innovation Solution
An integrated circuit with a power switch featuring an internally coupled current sense node and temperature sense circuit, where the temperature sense diodes are connected between the sense emitter and emitter nodes, allowing them to carry current and clamp voltage transients, enhancing ESD and EOS robustness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If temperature sense diodes are left floating in conventional power devices, then device structure is simpler, but ESD and EOS robustness deteriorates due to high voltage transients
Solution Approach 1:
The temperature sense circuit is merged with the power switch structure by internally coupling the temperature sense diodes between the sense emitter and emitter nodes. This integration allows the temperature sense circuit to share the same physical structure and current paths as the power switch, eliminating the need for separate floating connections while providing ESD and EOS protection.
Solution Approach 2:
The temperature sense diodes act as intermediary elements that provide a controlled current path between the sense emitter and emitter nodes. This intermediary structure allows the circuit to safely dissipate voltage transients and protect against ESD and EOS events without requiring complex external protection circuits.
2Reliability
If temperature sense diodes are internally coupled between sense emitter and emitter nodes, then ESD and EOS robustness improves, but active area utilization decreases
Solution Approach 1:
The temperature sense circuit is implemented in the vertical dimension of the power device structure by utilizing the existing sense emitter and emitter nodes. This vertical integration allows the temperature sense diodes to be placed within the existing current paths without requiring additional lateral space, thereby maintaining high active area utilization while providing robust protection.
3Measurement precision
If temperature sense circuit is externally connected, then measurement capability is maintained, but floating potential causes voltage transient damage
Solution Approach 1:
The temperature sense diodes are connected between the sense emitter and emitter nodes, establishing an equipotential path that prevents floating potential. This connection ensures that the temperature sense circuit remains at a defined potential relative to the power switch terminals, eliminating the risk of voltage transient damage while maintaining temperature measurement capability through the same current path.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves ESD and EOS robustness by ensuring no floating potential in the temperature sense diodes, protecting the power semiconductor device from high voltage transients and increasing active area utilization.
Implementation Method 1
the temperature sense diodes are connected between the sense emitter and emitter nodes, allowing them to carry current and clamp voltage transients
Data Source
AI summary
An integrated circuit comprises a power switch comprising a current path and a current sense node; and a temperature sense circuit internally coupled between the current path and the current sense node.