Power Switching Modular Element With Vertical Cooling Channels
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Solution Overview
Problem
Current power switching modules face challenges in compactness and cooling efficiency, particularly with the integration of new semi-conductors like SiC and GaN, and require improved modularity and reparability for efficient thermal management and cost reduction.
Innovation Solution
A power switching modular element with a lamination of electroconductive plates and an intermediate dielectric layer, incorporating electronic power switching chips with strategically positioned openings for electrical continuity and mechanical assembly, allowing for flexible transistor mounting and efficient cooling through fluid circulation channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the power switching modules are made more compact to reduce parasitic elements, then the switching speed and electromagnetic radiation control improve, but the cooling constraints become more critical and thermal management becomes more difficult
Solution Approach 1:
The module is segmented into multiple independent layers (electroconductive plates separated by dielectric layers) with through-openings that allow cooling fluid to circulate through each layer. This segmentation enables efficient heat extraction from power chips while maintaining compact overall dimensions, resolving the contradiction between compactness and thermal management.
Solution Approach 2:
The invention transitions from planar cooling to three-dimensional cooling by creating vertical through-openings that extend through the entire lamination stack. This dimensional change allows cooling fluid to access power chips from multiple levels simultaneously, enabling effective thermal management in the compact vertical space without compromising cooling efficiency.
2Adaptability or versatility
If modularity is increased to allow different circuits and improve reparability, then standardization and cost reduction improve, but the device complexity increases
Solution Approach 1:
The module is divided into standardized, interchangeable layers (electroconductive plates, dielectric layers, power chips) that can be independently manufactured and assembled. This segmentation enables high modularity and adaptability for different circuit configurations while reducing overall complexity through standardization of individual components.
Solution Approach 2:
The standardized layer structure serves multiple functions: electrical conduction, thermal management, mechanical support, and fluid circulation. This multi-functionality reduces the need for separate specialized components, thereby reducing device complexity while maintaining high modularity and adaptability.
3Power
If new power semi-conductors like SiC and GaN are integrated to increase current densities and switching frequencies, then power efficiency improves, but the compactness requirements become more stringent and thermal management becomes more challenging
Solution Approach 1:
The invention utilizes vertical through-openings and multi-layer stacking to accommodate high current density requirements of SiC and GaN devices. The three-dimensional arrangement allows efficient current paths while maintaining compact planar footprint, enabling high power density without compromising compactness.
Solution Approach 2:
Power chips are distributed across multiple separated layers with cooling channels between them. This segmentation allows each chip to be optimally sized for high current density while the distributed arrangement facilitates efficient thermal management, resolving the contradiction between high power and compactness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances compactness, reduces parasitic elements, improves thermal management, and facilitates cost-effective mass production while enabling flexible assembly and efficient cooling, suitable for advanced semi-conductor technologies like SiC and GaN.
Implementation Method 1
a lamination of first and second electroconductive plates which are separated by an intermediate dielectric layer
Implementation Method 2
Cooling devices that operate by means of a heat-transfer fluid
Implementation Method 3
the electroconductive layer of the first opening being electrically connected to the switching control electrode
Data Source
AI summary
The invention relates to a modular element (2) comprising a stratification of first and second electroconductive plates (PH2, PB2) which are separated by an intermediate dielectric layer (CD2) and at least one electronic power switching chip (CP1, CP2) which is implanted between the first and second plates, the chip having a upper face comprising a first power electrode and a switching control electrode and a lower face comprising a second power electrode, and the first and second power electrodes being in electrical continuity respectively with the first and second plates. According to the invention, the modular element comprises a plurality of openings (OG2, OA2, OB2, OC2, OD2) extending into the stratification from outer surfaces of the first and second plates and perpendicularly to said outer surfaces, the plurality of openings comprising at least one first opening (OG2) communicating with the switching control electrode and at least one second opening (OA2, OB2) passing through the entire stratification, the first and second openings each comprising a dielectric layer (DE2) and an electroconductive layer (CI2), and the electroconductive layer of the first opening being electrically connected to the switching control electrode.