Power Transistor Avalanche Shutdown for Inductive Voltage Spikes
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Solution Overview
Problem
Switching off power transistor circuits in electronic circuits with parasitic inductances can cause voltage increases due to stored energy, which is not efficiently managed by existing clamping circuits that add cost and complexity.
Innovation Solution
Operating power transistors in Avalanche mode to dissipate stored energy within the transistors, eliminating the need for additional clamping circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a clamping circuit is connected in parallel with the power transistor circuit to clamp voltage and dissipate stored energy, then voltage protection is improved, but device complexity and cost increase
Solution Approach 1:
The power transistor itself is made to dissipate the stored energy from parasitic inductances through Avalanche mode operation. The transistor's inherent Avalanche capability allows it to act as its own protection mechanism, eliminating the need for external clamping circuits and achieving self-protection functionality.
Solution Approach 2:
The protection function previously requiring a separate clamping circuit is extracted and integrated directly into the power transistor through Avalanche mode operation. This removes the need for additional protection components while maintaining voltage protection capability.
2Reliability
If a clamping circuit is connected in parallel with the power transistor circuit to clamp voltage and dissipate stored energy, then voltage protection is improved, but cost increases
Solution Approach 1:
The power transistor itself is made to dissipate the stored energy from parasitic inductances through Avalanche mode operation. The transistor's inherent Avalanche capability allows it to act as its own protection mechanism, eliminating the need for external clamping circuits and achieving self-protection functionality.
Solution Approach 2:
The protection function previously requiring a separate clamping circuit is extracted and integrated directly into the power transistor through Avalanche mode operation. This removes the need for additional protection components while maintaining voltage protection capability.
3Productivity
If the power transistor circuit is switched off in circuits with parasitic inductances, then switching function is achieved, but voltage across the transistor increases due to stored energy
Solution Approach 1:
The harmful voltage spike caused by parasitic inductances during switching off is converted into a beneficial Avalanche breakdown phenomenon. By intentionally allowing the voltage to rise and trigger Avalanche mode, the stored energy is safely dissipated through the transistor's inherent Avalanche capability rather than damaging the device or requiring external protection circuits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively manages energy dissipation without additional hardware, reducing circuit complexity and cost while ensuring safe operation of power transistors.
Implementation Method 1
operating at least one power transistor included in the power transistor circuit in an Avalanche mode so that at least a portion of energy stored in the electronic circuit before switching off the power transistor circuit is dissipated in the at least one power transistor
Data Source
AI summary
A method is disclosed. The method includes switching off a power transistor circuit in an electronic circuit. The electronic circuit includes a power source and a load circuit. The power transistor circuit is connected between the power source and the load circuit. Switching off the power transistor circuit includes operating at least one power transistor included in the power transistor circuit in an Avalanche mode so that at least a portion of energy stored in the electronic circuit before switching off the power transistor circuit is dissipated in the at least one power transistor.


