Power Transistor Driving Circuit with Dynamic Turn-Off Timing

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Solution Overview

Problem

The existing power transistor driving methods fail to ensure reliable turn-off processes for power components in switching power supplies, leading to inefficiencies and potential damage to components.

Innovation Solution

A power transistor driving method and circuit that dynamically adjusts the turn-off timing based on the change rate of the drain-source voltage, using a timer and pull-down switches to adjust the current and time periods, ensuring reliable turn-off by increasing or decreasing the time period based on voltage slopes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a fixed turn-off timing is used for the power transistor, then the driving circuit is simple, but the turn-off reliability is insufficient when voltage change rates vary

Engineering Contradiction:
Improveturn-off reliabilityVSAvoiddriving circuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies dynamics by transitioning from a fixed turn-off timing to a dynamic timing adjustment mechanism. The turn-off time is dynamically modified based on real-time detection of voltage change rates (dV/dt). When the detected dV/dt exceeds a threshold, the turn-off time is extended to ensure reliable turn-off. This dynamic adaptation allows the circuit to maintain reliability across varying operating conditions without requiring complete redesign of the driving architecture.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements feedback by continuously monitoring the drain-source voltage change rate and using this information to adjust the turn-off timing. A detection circuit measures the actual dV/dt during the turn-off process, and this measured value feeds back to the timing control mechanism. The feedback loop enables automatic compensation: when dV/dt is higher than expected, the system responds by extending the turn-off duration, thereby ensuring reliable operation without manual intervention or complex external control.

Inventive Principle:
Principle #23Feedback

2Reliability

If the turn-off time is extended to ensure reliable turn-off, then turn-off reliability improves, but switching frequency and system efficiency decrease

Engineering Contradiction:
Improveturn-off reliabilityVSAvoidswitching frequency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The system dynamically adjusts the turn-off time based on actual voltage change rate conditions rather than using a conservative fixed extended time. When dV/dt is within normal range, the turn-off time remains at its baseline value, allowing high switching frequency. Only when dV/dt exceeds the threshold does the system extend the turn-off time, and only for the duration necessary to ensure reliable turn-off. This dynamic approach minimizes the impact on switching frequency while ensuring reliability when needed.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the turn-off time parameter adaptively based on the detected voltage change rate. Instead of maintaining a constantly extended turn-off time, the system modifies the turn-off time parameter only when necessary (when dV/dt > threshold). This conditional parameter change ensures that the system operates at high switching frequency under normal conditions while achieving reliable turn-off only when voltage transients require it, thus resolving the contradiction between reliability and productivity.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If a simple fixed timing control is used, then the circuit is easy to implement, but electromagnetic compatibility deteriorates due to uncontrolled voltage spikes

Engineering Contradiction:
Improvecircuit implementation easeVSAvoidelectromagnetic compatibility
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The system uses feedback from the voltage change rate detection to control the turn-off timing, which indirectly suppresses voltage spikes and improves electromagnetic compatibility. By detecting when dV/dt becomes excessively high and responding by extending the turn-off time, the system prevents dangerous voltage transients without requiring direct EMI filtering circuits or complex suppression networks. The feedback mechanism provides a form of active control that addresses EMI at its source.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system takes preliminary anti-action by detecting the voltage change rate trend and proactively adjusting the turn-off time before dangerous voltage spikes can occur. When the detection circuit observes that dV/dt is approaching problematic levels, the system preemptively extends the turn-off duration to prevent the formation of harmful voltage transients. This preventive approach improves electromagnetic compatibility without requiring post-spike correction circuits or complex EMI mitigation hardware.

Inventive Principle:
Principle #9Preliminary anti-action

Data Source

PatentUS11218136B2Power transistor driving method, driving circuit and switching circuit
Publication Date: 2022.01.04 JOULWATT TECH INC LTD
  • US11218136B2 patent drawing
  • US11218136B2 patent drawing

AI summary

The present disclosure provides a power transistor driving method, a driving circuit and a switching circuit. When the power transistor is an N-type component, a driving pole of the power transistor is pulled down in a first current, and when a time period recorded by the timer reaches a first time period, a pull-down switch is turned on or the driving pole of the power transistor is pulled down in a second current; the driving pole of the power transistor is pulled down by the pull-down switch; when a timer is started from a moment at which the power transistor is turned off, the first time period is higher than a time period from a moment at which a switching tube is turned off to a moment at which the change rate of the drain-source voltage of the power transistor along with the time is higher than the first slope.