Phase-Change Memory Power Reduction via Data Inversion

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Solution Overview

Problem

Conventional phase-change random access memory (PRAM) consumes substantial power during data writing, as it always performs the writing process regardless of the data value, leading to inefficient power usage and redundant writing of the same bits.

Innovation Solution

An apparatus and method that calculate the power consumption for writing original and inverted data, comparing these values to determine which data set requires less power, allowing only the differing bits with lower power consumption to be stored, thereby reducing overall power usage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If data is always written to PRAM regardless of existing data value, then data storage is ensured, but power consumption increases due to redundant writing operations

Engineering Contradiction:
Improvedata storage reliabilityVSAvoidwriting power consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent applies partial action by performing writing operations only on the necessary subset of data bits rather than always writing the entire data word. The system calculates power consumption for writing only the different bits (partial writing) and compares it with inverting and writing only different bits of the inverted data, thereby avoiding redundant writing operations while ensuring data integrity.

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The patent changes the parameter of data representation by considering both the original data and its inverted form. By calculating power consumption for both representations and selecting the more efficient one, the system dynamically adjusts the data writing approach based on power consumption parameters, thereby reducing overall energy usage while maintaining reliable data storage.

Inventive Principle:
Principle #35Parameter changes

2Ease of operation

If data is written as complete word units, then writing process is simplified, but power is wasted on repeatedly writing the same bits

Engineering Contradiction:
Improvewriting process simplicityVSAvoidredundant writing power
Core Design Contradiction:
Ease of operationVSLoss of energy

Solution Approach 1:

The patent segments the data writing process into two approaches: (1) writing only the different bits of the original data, and (2) inverting the data and writing only the different bits of the inverted data. By segmenting the writing operation to target only necessary bits rather than writing complete word units, the system reduces redundant energy consumption while maintaining ease of operation through systematic comparison and selection.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies inversion by considering the inverted form of the data as an alternative writing approach. Instead of always writing the original data, the system inverts the data, calculates power consumption for writing the inverted form, and selects the approach (original or inverted) that consumes less power. This inversion strategy enables the system to avoid redundant writing of the same bits while maintaining operational simplicity.

Inventive Principle:
Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach minimizes power consumption by avoiding redundant writing and optimizing the storage of data in PRAM, enhancing the efficiency of memory writing operations.

Implementation Method 1

A phase-change random access memory (PRAM) is a memory using a GST (Ge2Sb2Te5) material which has two different resistances according to the status of a memory cell

Methodology Applied
Scientific EffectPhase change: Phase Change

Data Source

PatentUS7920413B2Apparatus and method for writing data to phase-change memory by using power calculation and data inversion
Publication Date: 2011.04.05 ELECTRONICS & TELECOMM RES INST
  • US7920413B2 patent drawing
  • US7920413B2 patent drawing
  • US7920413B2 patent drawing

AI summary

Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time. According to the present invention, since the PRAM consumes different amounts of power when writing data with a value of 0 and data with a value of 1, the power consumed when input original data is stored and the power consumed when the input original data is inverted and stored are compared to each other, the data with a smaller power consumption is stored when the data is written to the PRAM as a word unit, and thus the power consumption of the PRAM can be reduced.