Phase-Change Memory Nitriding to Prevent Hydrogen Bonding
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Solution Overview
Problem
The existing methods for depositing a phase-change layer in phase-change random access memory (PRAM) using CVD and ALD face challenges in achieving high-quality deposition at low temperatures, particularly due to the influence of hydrogen bonding from plasma cleaning on the substrate surfaces, which affects the incubation time and directivity of the phase-change layer, thereby impacting mass productivity.
Innovation Solution
A substrate treating apparatus and method that includes surface treating with H2 plasma to remove impurities, followed by nitriding using nitrogen-containing gases to prevent hydrogen bonding, allowing for the deposition of a phase-change layer with improved characteristics by performing nitriding and deposition in the same chamber, thereby enhancing the quality and productivity of the phase-change memory.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If H2 plasma surface treatment is performed to remove impurities, then the surface cleanliness is improved, but hydrogen bonding occurs on the thin film surfaces which changes deposition characteristics
Solution Approach 1:
The patent extracts the harmful hydrogen bonding effect by introducing a nitrogen plasma treatment step that removes adsorbed hydrogen from the thin film surfaces after H2 plasma cleaning, thereby eliminating the negative impact on deposition characteristics while maintaining surface cleanliness
Solution Approach 2:
The patent introduces nitrogen plasma as an intermediary treatment between H2 plasma cleaning and CVD deposition. This intermediary step prevents hydrogen bonding by substituting hydrogen with nitrogen on the surface, thus mediating between the need for clean surfaces and the need for stable deposition characteristics
2Manufacturing precision
If CVD method is used to deposit phase-change layer, then deposition characteristics are affected by hydrogen bonding, but high-quality deposition can be achieved
Solution Approach 1:
The patent performs preliminary nitrogen plasma treatment before CVD deposition to prevent hydrogen bonding on the thin film surfaces. This preliminary action ensures that the subsequent deposition process proceeds with consistent characteristics, reducing variability and improving mass productivity
Solution Approach 2:
The patent converts the harmful effect of hydrogen bonding into a benefit by using nitrogen plasma to deliberately introduce nitrogen species that block hydrogen adsorption. This transforms the problem of hydrogen bonding into a controlled surface modification that improves deposition consistency
3Manufacturing precision
If plasma cleaning is performed on bottom electrode, then impurities are removed, but incubation time and directivity of phase-change layer are affected
Solution Approach 1:
The patent introduces nitrogen plasma treatment as an intermediary step between H2 plasma cleaning and phase-change layer deposition. This intermediary treatment removes adsorbed hydrogen that would otherwise increase incubation time, thereby reducing the time loss while maintaining the impurity removal benefit
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively prevents changes in deposition characteristics caused by plasma cleaning, reduces incubation time, and improves mass productivity by ensuring consistent and high-quality phase-change layer formation, even when using CVD or ALD methods.
Implementation Method 1
performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed
Implementation Method 2
performing nitriding on the surface of the substrate from which the impurities are removed
Implementation Method 3
The GST thin film may be deposited through physical vapor deposition (PVD)
Implementation Method 4
the GST thin film may be deposited by using methods such as chemical vapor deposition (CVD)
Data Source
AI summary
Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode. The substrate treating apparatus for manufacturing a phase-change memory includes a load lock chamber into/from which a plurality of substrates are loaded or unloaded, the load lock chamber being converted between an atmosphere state and a vacuum state, a nitriding chamber in which nitriding is performed on a surface of a substrate on which a bottom electrode is disposed, the nitriding chamber being coupled to one side of a plurality of sides of the vacuum transfer chamber, and a process chamber in which a phase-change layer is deposited on the surface of the substrate on which nitriding is performed in the nitriding process chamber, the process chamber being coupled to one of the plurality of sides of the vacuum transfer chamber.