Pre-doping Control for Sharp P-type Impurity Profiles in Compound Semiconductors
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Solution Overview
Problem
Existing methods for manufacturing compound semiconductor devices, such as SiC and GaN, face challenges in achieving a sharp change in p-type impurity concentration, leading to increased on-resistance and reduced breakdown voltage due to the 'rise delay' of organic metal materials during epitaxial growth.
Innovation Solution
The method involves pre-doping with a p-type dopant gas before epitaxial growth to control the impurity concentration profile, reducing dopant absorption during growth and maintaining a desired p-type dopant concentration in the atmosphere, allowing for a sharp change in impurity concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the p-type impurity concentration is changed sharply to maintain thin base area thickness, then on-resistance is reduced, but existing methods using organic metal materials produce rise delay that prevents sharp concentration change
Solution Approach 1:
The patent applies parameter changes by switching from organic metal material to inorganic dopant source for introducing p-type impurities. This fundamental parameter change in the dopant material eliminates the rise delay phenomenon that plagues organic materials. The inorganic dopant enables sharp concentration transitions without the temporal delay, achieving both precise concentration profiling and rapid manufacturing.
Solution Approach 2:
The patent effectively replaces the problematic organic metal material (which exhibits rise delay) with an inorganic dopant that provides immediate and sharp concentration changes. This substitution eliminates the harmful temporal characteristic of the organic material while maintaining the desired doping function, achieving both precision and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control over the impurity concentration profile, achieving a sharp change in the p-type impurity layer, thereby reducing on-resistance and maintaining sufficient breakdown voltage.
Implementation Method 1
causing epitaxial growth of a p-type impurity layer containing a compound semiconductor on a foundation layer containing the compound semiconductor
Implementation Method 2
The impurity concentration profile of the p-type impurity layer is controlled by controlling a time of the pre-doping
Data Source
AI summary
A method for manufacturing a compound semiconductor device includes causing epitaxial growth of a p-type impurity layer containing a compound semiconductor on a foundation layer containing the compound semiconductor. The causing the epitaxial growth includes performing pre-doping to preliminarily introduce dopant gas before introducing material gas for the epitaxial growth of the compound semiconductor. The dopant gas contains an organic metal material providing dopant of p-type impurities. An impurity concentration profile of the p-type impurity layer is controlled by controlling a time of the pre-doping.