Preceramic Polymer Insulating Layer for Semiconductor Transfer
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Solution Overview
Problem
Current methods for transferring semiconductor layers using Smart Cut technology are limited by the need for expensive high-resistivity carrier substrates, restrictive thermal expansion coefficients, and costly surface preparation, which hinder the production of thick buried insulator layers required for advanced microelectronics and power electronics applications.
Innovation Solution
A method involving the formation of an embrittlement plane in a donor substrate, followed by the deposition of a particle-filled preceramic polymer-based electrically insulating layer with a compatible thermal expansion coefficient, allowing for thermocompression assembly and high-temperature separation to transfer a thin semiconductor layer onto a carrier substrate, thereby reducing costs and expanding substrate capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If direct bonding is used to assemble the implanted donor substrate and carrier substrate, then the transfer process can be completed, but the surfaces require expensive preparation methods to achieve high flatness and low roughness
Solution Approach 1:
The patent introduces an intermediate layer between the donor substrate and carrier substrate that eliminates the need for expensive surface preparation. This intermediate layer acts as a mediator that accommodates surface irregularities while maintaining bonding reliability, thereby resolving the contradiction between reliable bonding and manufacturing cost.
2Quantity of substance
If conventional deposition methods are used for the buried insulator layer, then the layer thickness is limited, but thicker layers would eliminate the need for expensive high-resistivity carrier substrates and improve performance
Solution Approach 1:
The patent changes the material parameters of the buried insulator layer by using a polymer-based material instead of conventional inorganic materials. This parameter change enables deposition of much thicker layers (micrometer to millimeter range) while maintaining electrical insulation properties, thereby eliminating the need for expensive high-resistivity carrier substrates and improving device performance.
3Ease of manufacture
If conventional polymers are used for the buried insulator layer, then the material is easy to process, but they have incompatible thermal expansion coefficients and poor high-temperature behavior
Solution Approach 1:
The patent employs composite polymer materials that combine the processability advantages of conventional polymers with improved thermal stability. The composite structure allows the material to maintain compatibility with semiconductor processing temperatures while retaining the ease of manufacture benefits of polymer-based insulators.
4Strength
If thick buried insulator layers are deposited, then the withstand voltage of power components increases, but conventional methods cannot achieve sufficient thickness
Solution Approach 1:
The patent changes the deposition parameters and material properties to enable achievement of thick insulator layers (micrometer to millimeter range). This parameter change allows the manufacturing process to achieve the necessary thickness for high withstand voltage in power components, directly resolving the contradiction between voltage strength and thickness achievement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the transfer of thick semiconductor layers with improved thermal stability and reduced substrate costs, facilitating the production of advanced substrates for microelectronics and power electronics while eliminating the need for expensive carrier substrates and complex surface preparation.
Implementation Method 1
The formation of the insulating layer comprises coating the donor substrate and/or the carrier substrate with a coating formulation including a composite material formed by a matrix made of a particle-filled preceramic polymer
Implementation Method 2
The composite material has a second coefficient of thermal expansion, the second coefficient of thermal expansion differing from the first coefficient of thermal expansion by no more than 20% of the first coefficient of thermal expansion
Implementation Method 3
The production of the assembly comprises thermocompression of the donor substrate and of the carrier substrate
Implementation Method 4
separation comprises an annealing carried out at a temperature that is greater than the thermocompression temperature
Data Source
AI summary
A method for transferring, from a donor substrate to a carrier substrate, a thin layer having a first coefficient of thermal expansion. This method comprises: —forming an embrittlement plane in the donor substrate; —forming an electrically insulating layer on the surface of the donor substrate and/or of the carrier substrate; —producing an assembly by placing the donor substrate and the carrier substrate in contact with one another via the insulating layer; —separating the assembly by fracturing along the embrittlement plane. In order to form the electrically insulating layer, the method comprises coating the donor substrate and/or the carrier substrate with a coating formulation including a composite material formed by a matrix made of a particle-filled preceramic polymer, the composite material having a second coefficient of thermal expansion, the second coefficient of thermal expansion differing from the first coefficient of thermal expansion by no more than 20% of the first coefficient of thermal expansion.