Pre-clean Chamber with Independent Temperature Control for Oxide Removal
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Solution Overview
Problem
The fabrication of integrated circuits is hindered by the presence of intervening materials like native oxide layers on substrate surfaces, which introduce defects and affect electrical performance, necessitating effective pre-cleaning methods to form high-quality material layers.
Innovation Solution
A system and method involving a reaction chamber with a substrate tray and cooling body for temperature control, where a halogen-containing material is deposited and sublimated to remove oxide material from silicon substrates, utilizing rapid temperature cycling and reactant gases to chemically interact with the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a substrate is exposed to ambient air during transfer between fabrication systems, then the substrate can be transferred and processed, but native oxide material forms on the substrate surface
Solution Approach 1:
The patent employs an inert atmosphere (nitrogen or vacuum) within the reaction chamber and during substrate transfer to prevent oxidation of the substrate surface. The reaction chamber is sealed and maintained at reduced pressure or filled with inert gas, creating an oxygen-free environment that eliminates native oxide formation during substrate handling and processing.
2Manufacturing precision
If conventional cleaning methods are used to remove oxide material, then the substrate surface can be cleaned, but defects are introduced and electrical performance deteriorates
Solution Approach 1:
The patent utilizes phase transitions of halogen-containing materials (deposition from vapor phase to solid film, then sublimation back to vapor phase) to remove oxide material. The halogen material is deposited as a thin film at low temperature, then heated to sublime and carry away oxide contaminants, achieving clean removal without mechanical damage or defect introduction.
Solution Approach 2:
The patent employs precise temperature cycling and control during the halogen deposition and sublimation process. Temperature parameters are carefully adjusted to enable selective sublimation of halogen-oxide compounds while maintaining substrate integrity, achieving high surface cleanliness without introducing defects that would harm electrical performance.
3Productivity
If high temperature is applied to remove oxide material, then oxide removal efficiency increases, but substrate damage and defects increase
Solution Approach 1:
The patent uses phase transitions of halogen materials to enable oxide removal at lower temperatures. The halogen-containing material sublimates and reacts with oxide at controlled temperatures, forming volatile compounds that are removed without requiring high-temperature thermal processing that would damage the substrate.
Solution Approach 2:
The patent replaces mechanical/thermal oxide removal methods with chemical vapor deposition and sublimation processes. Instead of using high-temperature thermal field to remove oxide, the patent uses chemical reactions with halogen materials in vapor phase, followed by sublimation, achieving oxide removal through chemical rather than thermal mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the selective removal of oxide materials with high selectivity and low defect counts, facilitating the formation of high-quality layers such as epitaxial silicon, improving the electrical performance and quality of integrated circuits.
Implementation Method 1
cooling the substrate by transferring heat from the substrate tray to a cooling body
Implementation Method 2
subsequently sublimating the halogen-containing material by heating the cooled substrate by transferring heat from the substrate tray to the substrate
Implementation Method 3
sublimating the halogen-containing material by heating the cooled substrate
Data Source
AI summary
A system for removing an oxide material from a surface of a substrate can include a substrate tray to receive the substrate, and a cooling body to receive the substrate tray. The system may include a first temperature control element configured to control a temperature of the substrate tray and a second temperature control element configured to control a temperature of the cooling body, where the first temperature control element and the second temperature control element can be independently controlled. A method for removing oxide material from a surface of a substrate can include providing the substrate on a substrate tray having heating elements, cooling the substrate by transferring heat from the substrate tray to a cooling body, depositing a halogen-containing material on the cooled substrate while the substrate is on the cooling body, and subsequently sublimating the halogen-containing material by heating the cooled substrate by transferring heat from the substrate tray to the substrate.