Semiconductor Precursor Ampoule with Tortuous Flow Channels
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Solution Overview
Problem
Existing ampoule designs for semiconductor manufacturing precursors fail to adequately saturate carrier gases with low vapor pressure materials, leading to inconsistent delivery and poor conformality on high aspect ratio structures, necessitating improved transport kinetics and process conditions.
Innovation Solution
The ampoule design features alternating elongate walls and passages that create a tortuous flow path for carrier gases, enhancing residence time and saturation by forcing the gas through a bed of granulated or pelletized solid precursors, promoting turbulence and diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If standard ampoule designs are used with simple flow paths, then device complexity is low, but carrier gas saturation with precursor is insufficient
Solution Approach 1:
The ampoule flow path is segmented into multiple serpentine channels that wind through the precursor bed, dividing the single straight flow path into several segments. This segmentation increases the total gas-precursor contact area and residence time, achieving better saturation without requiring a completely complex multi-chamber design.
Solution Approach 2:
The flow path transitions from a one-dimensional straight line to a three-dimensional serpentine pattern that winds through the precursor bed. By utilizing vertical and lateral dimensions, the gas is forced to traverse a longer path through the precursor material, enhancing saturation while maintaining a relatively simple overall ampoule structure.
2Quantity of substance
If residence time between gas and solid is increased by flowing gas over trays, then precursor saturation improves, but device complexity and space requirements increase
Solution Approach 1:
The serpentine flow channels are merged directly with the precursor bed, eliminating the need for separate trays or chambers. The flow path is integrated into the ampoule body itself, combining the residence time function with the containment structure, thereby reducing overall device complexity while maintaining effective saturation.
Solution Approach 2:
The ampoule structure itself provides the serpentine flow path without requiring external components or complex assembly. The flow channels are formed by the ampoule walls and internal geometry, allowing the device to serve its own function of enhancing residence time without needing additional trays or structural elements.
3Productivity
If high-velocity jets are used to decrease boundary layer size, then precursor delivery improves, but turbulence and consistent delivery are compromised
Solution Approach 1:
The flow path is designed to dynamically adjust flow characteristics as gas moves through the serpentine channels. The winding geometry naturally creates turbulence and mixing without requiring high-velocity jets, allowing the system to adapt flow patterns to maintain both delivery rate and consistency throughout the ampoule operation.
Solution Approach 2:
The serpentine flow path changes flow parameters (velocity distribution, turbulence level, contact time) gradually as gas moves through the channels. This progressive parameter change allows consistent precursor saturation without the abrupt high-velocity jets that cause delivery variability, maintaining reliable and consistent precursor delivery throughout the process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves higher precursor concentrations in the carrier gas, improving process stability and conformality on wafer surfaces, particularly for high aspect ratio structures, while allowing easy refill and maintaining consistent delivery.
Implementation Method 1
Precursors with a low vapor pressure frequently use a carrier gas to carry vaporized or sublimed precursor out of the ampoule to a process reactor
Implementation Method 2
enhancing the transport kinetics to improve process conditions
Implementation Method 3
forcing the gas through a bed of granulated or pelletized solid precursors, promoting turbulence and diffusion
Implementation Method 4
promoting turbulence and diffusion
Data Source
AI summary
Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. Alternating first and second elongate walls in the container are arranged to define longitudinal flow channels containing a precursor material, and alternating first and second passages between each of the longitudinal flow channels permitting fluid communication between adjacent longitudinal flow channels, wherein the first passages are located in a lower portion of the precursor cavity and the second passages are located an upper portion of the cavity. A flow path is defined by the longitudinal flow channels and the passages, through which a carrier gas flows in contact with the precursor material. In one or more embodiments, the precursor material is a solid.