Semiconductor Precursor Ampoule with Tortuous Gas Passages
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Solution Overview
Problem
Existing ampoules for delivering semiconductor chemical precursors suffer from inconsistent saturation of carrier gas due to short flow paths, leading to reduced precursor lifetime and uneven precursor distribution.
Innovation Solution
The ampoule design incorporates a solid volume of semiconductor chemical precursor with a tortuous flow path defined by at least one flow channel, allowing a carrier gas to flow in contact with the precursor for extended residence time and saturation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a short flow path is used in the ampoule, then the device complexity is reduced, but the carrier gas saturation consistency deteriorates
Solution Approach 1:
The patent employs a tortuous (curved) flow path instead of a straight line, forcing the carrier gas to follow a winding route through the precursor material. This curved path increases the effective contact length and residence time without increasing the linear dimensions of the ampoule, thereby maintaining compact design while achieving consistent saturation.
Solution Approach 2:
The flow path extends into the third dimension by creating a tortuous route that moves through depth and lateral space rather than simply lengthening the linear path. This dimensional approach allows the gas to traverse a longer effective path within a compact ampoule volume, improving saturation consistency without proportionally increasing overall device size.
2Volume of stationary object
If a short flow path is used in the ampoule, then the ampoule size is reduced, but the precursor lifetime deteriorates
Solution Approach 1:
The tortuous flow path increases the effective residence time of carrier gas within the precursor material by forcing it to follow a winding route. This extended contact time allows for more complete and consistent precursor vaporization and saturation without requiring a larger ampoule volume, thereby extending effective precursor lifetime within the compact design.
3Manufacturing precision
If a short flow path is used in the ampoule, then the manufacturing precision requirements are reduced, but the precursor distribution uniformity deteriorates
Solution Approach 1:
The tortuous flow path design inherently distributes carrier gas more uniformly across the precursor material by forcing the gas to contact different regions along its winding route. This curved path approach improves precursor distribution uniformity while the flow path can be fabricated using standard techniques without requiring excessive manufacturing precision.
4Reliability
If trays or inserts are added to increase surface area contact, then the carrier gas saturation improves, but the device complexity increases
Solution Approach 1:
The patent removes the need for separate trays or inserts by integrating the flow path directly into the precursor material matrix. The tortuous channels are formed within the solid precursor itself, eliminating auxiliary components while maintaining effective gas-precursor contact and saturation.
Solution Approach 2:
The flow path structure is merged with the precursor material, creating a unified structure where the channels are an integral part of the precursor block rather than a separate component. This integration eliminates the need for trays or inserts while achieving the same or better saturation performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design ensures consistent and efficient delivery of semiconductor chemical precursors by maintaining carrier gas saturation and reducing precursor dust generation, thereby enhancing the lifetime and performance of the ampoule.
Implementation Method 1
Due to continuous sublimation of the solid semiconductor chemical precursor, the volume of the headspace of an ampoule varies and becomes larger during the delivery process.
Implementation Method 2
the precursor is typically delivered to a semiconductor process chamber as a vapor using a carrier gas
Data Source
AI summary
Ampoules including a solid volume of the semiconductor chemical precursor and methods of use and manufacturing are described. The solid volume of the semiconductor chemical precursor includes an ingress opening, at least one flow channel, and an outlet passage that are in fluid communication with each other. The solid volume of the semiconductor manufacturing precursor is made of a porous or alternatively a non-porous material. A flow path is defined by at least one flow channel through which a carrier gas flows in contact with the solid volume of the semiconductor chemical precursor.