Precursor Material Calcination for LED Phosphors

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Solution Overview

Problem

Existing processes for producing pulverulent precursor materials for optoelectronic components, such as LEDs, face challenges in achieving finely divided and reactive materials with high sintering capacity, often resulting in coarse-grained products and oxidic contamination due to high reactivity.

Innovation Solution

A process involving the calcination of a mixture with specific surface area silicon nitride and lanthanoid activators under a protective gas atmosphere, controlling particle size and agglomeration through synthesis parameters, and incorporating a second phase as a sintering aid to produce a finely distributed pulverulent precursor material with improved sinterability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If high reactivity precursor materials are used to achieve fine division and high sintering capacity, then sintering capacity is improved, but oxidic contamination increases

Engineering Contradiction:
Improvesintering capacityVSAvoidoxidic contamination
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies inert atmosphere by conducting calcination processes under protective gas (nitrogen or argon) to prevent oxidation of the highly reactive precursor materials. This allows the material to maintain its high reactivity and sintering capacity while avoiding oxidic contamination that would otherwise occur during high-temperature processing.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Ease of manufacture

If conventional calcination processes are used to produce pulverulent precursor material, then production is simplified, but particle size becomes coarse and sintering capacity decreases

Engineering Contradiction:
Improveprocess simplicityVSAvoidparticle size control
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by optimizing calcination temperature (1000-1500°C), holding time (1-24 hours), and protective gas flow rates to control particle size and prevent excessive coarsening. These parameter adjustments maintain process simplicity while achieving the desired fine particle size and high sintering capacity.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The process yields a finely divided pulverulent precursor material with enhanced sintering capacity and reduced oxidic contamination, suitable for use in optoelectronic components, enabling efficient production of ceramic layers with improved optical properties and stability.

Implementation Method 1

B) calcining the mixture under a protective gas atmosphere

Methodology Applied
Scientific EffectCalcination:

Implementation Method 2

The reactive precursor material can be used in an optoelectronic component in powder or ceramic form

Methodology Applied
Scientific EffectSintering: Sintering

Implementation Method 3

calcining the mixture under a protective gas atmosphere

Methodology Applied
Scientific EffectOxidation prevention: Oxidation

Data Source

PatentUS9828546B2Method for producing a pulverulent precursor material, pulverulent precursor material, and use of pulverulent precursor material
Publication Date: 2017.11.28 OSRAM OLED
  • US9828546B2 patent drawing

AI summary

A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0≦b≦1 and 0≦c≦ and 0≦d≦1 and 0≦e≦1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.