Precursor Container Gas-Permeable Partition Wall
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Solution Overview
Problem
In CVD and ALD processes, excess precursor chemicals can lead to waste and affect film growth rates, and varying gas volumes in precursor containers can alter deposition quality, necessitating a solution to mitigate these issues and improve gas feed arrangements.
Innovation Solution
A precursor container with a first and second chamber separated by a gas-permeable partition wall, where pressure increase in the first chamber pushes precursor material through a conduit to the second chamber, aided by inert gas and temperature control to vaporize the precursor effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If excess precursor chemical is used to ensure sufficient coverage of substrate surface, then film coverage is improved, but waste increases and film growth rate may be negatively affected
Solution Approach 1:
The precursor container is divided into two separate chambers: a storage chamber for holding precursor material and a vaporization chamber for controlled vaporization. This segmentation allows precise control over the amount of precursor that actually contacts the substrate, preventing both insufficient coverage and excessive waste.
Solution Approach 2:
The system controls the vaporization temperature and pressure parameters to precisely regulate the amount of precursor vapor generated. By adjusting these parameters, the system ensures optimal precursor dosage for complete substrate coverage without generating excessive vapor that would lead to waste and potential film growth issues.
2Productivity
If larger precursor container volume is used to reduce refilling frequency, then operational continuity is improved, but control over precursor vaporization becomes less precise
Solution Approach 1:
By separating the large-volume storage chamber from the small-volume vaporization chamber, the system combines the benefits of both large capacity and precise control. The storage chamber can be large to reduce refilling frequency, while the vaporization chamber remains small to maintain precise dosage control during the actual vaporization process.
Solution Approach 2:
The partition wall with controlled permeability acts as an intermediary between the storage chamber and vaporization chamber. It allows controlled transfer of precursor vapor while maintaining the functional independence of each chamber, enabling large storage volume without compromising vaporization precision.
3Productivity
If inert gas flow rate is increased to enhance precursor vapor transport, then deposition efficiency is improved, but pressure and concentration control becomes difficult affecting deposition quality
Solution Approach 1:
The system creates different gas flow conditions in different locations: high inert gas flow in the vaporization chamber to efficiently transport precursor vapor, and controlled flow conditions at the substrate to maintain precise pressure and concentration. The partition wall with selective permeability helps maintain these different local conditions simultaneously.
Solution Approach 2:
The partition wall serves as an intermediary that allows controlled gas exchange between chambers. It enables the inert gas to flow freely in the storage chamber for efficient vapor transport while regulating the pressure and concentration conditions in the vaporization chamber to maintain deposition quality.
4Productivity
If precursor material is heated to increase vaporization rate, then deposition rate is improved, but thermal decomposition of heat-sensitive chemicals occurs
Solution Approach 1:
The heating element is placed only in the vaporization chamber, not in the storage chamber. This allows localized heating to increase vaporization rate and deposition rate while keeping the bulk precursor material in the storage chamber at lower temperatures to prevent thermal decomposition of heat-sensitive chemicals.
Solution Approach 2:
Different temperature conditions are maintained in different locations: high temperature in the vaporization chamber to achieve fast vaporization and deposition, and low temperature in the storage chamber to maintain chemical stability. The partition wall helps maintain these different thermal environments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution ensures precise control over precursor vaporization, reduces thermal decomposition, and maintains stability of sensitive chemicals, enhancing deposition quality and reducing waste, while being compact and safe for use in ALD, CVD, and ALE processes.
Implementation Method 1
the partition wall being a gas-permeable wall allowing gas from the first volume to permeate to the second volume
Implementation Method 2
providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume
Implementation Method 3
temperature control to vaporize the precursor effectively
Implementation Method 4
pressure increase in the first volume pushes precursor material through a conduit to the second chamber
Data Source
AI summary
Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.