Precursor Flow Adapter Layout for Uniform Semiconductor Etching

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Solution Overview

Problem

Existing semiconductor processing systems face challenges in delivering precursors uniformly and efficiently, leading to non-uniform etching processes and potential damage to remote plasma units due to reactive precursors.

Innovation Solution

The system includes a remote plasma unit, an adapter, an isolator, and a mixing manifold configured to mix precursors before delivery to the processing chamber, ensuring uniform etchant distribution and protecting the remote plasma unit from reactive precursors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If precursors are delivered directly into the processing chamber, then the etching process can proceed, but the precursors may damage the remote plasma unit due to reactivity

Engineering Contradiction:
Improveremote plasma unit protectionVSAvoidsystem configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent introduces an adapter with separate channels as an intermediary component between the precursor delivery system and the processing chamber. This adapter allows different precursors to be delivered through separate fluidly isolated channels, preventing direct contact between reactive precursors and the remote plasma unit while still enabling the etching process to proceed effectively

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If multiple precursors are delivered through the same channel, then the system is simpler, but the precursors cannot be fluidly isolated leading to non-uniform mixing

Engineering Contradiction:
Improveetch uniformityVSAvoidchannel configuration
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent segments the precursor delivery system into multiple separate channels within the adapter. Each channel can deliver different precursors independently, allowing for precise control of precursor mixing ratios and timing. This segmentation enables uniform etching by ensuring proper fluid isolation and controlled mixing of precursors before they enter the processing chamber

Inventive Principle:
Principle #1Segmentation

3Manufacturing precision

If precursors are mixed before entering the chamber, then uniform etching is achieved, but additional components are required

Engineering Contradiction:
Improveprocessing uniformityVSAvoidnumber of components
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent merges the functions of precursor delivery, fluid isolation, and mixing control into a single integrated adapter component. The adapter combines multiple channels and mixing regions in one piece, achieving uniform precursor mixing and uniform processing across the substrate while minimizing the number of separate components required

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables uniform processing across the substrate surface, reduces particulate deposition, and protects the remote plasma unit from damage, resulting in higher quality semiconductor devices.

Implementation Method 1

a remote plasma unit configured to mix a first precursor with a second precursor

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

the adapter may define an opening to a central channel at a first end, and the central channel may be characterized by a first cross-sectional surface area

Methodology Applied
Scientific EffectFluid flow:

Data Source

PatentUS12340979B2Semiconductor processing chamber for improved precursor flow
Publication Date: 2025.06.24 APPLIED MATERIALS INC
  • US12340979B2 patent drawing
  • US12340979B2 patent drawing
  • US12340979B2 patent drawing

AI summary

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.