Precursor Gas Supply Lines for Stable Semiconductor Flow Control
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Solution Overview
Problem
Existing semiconductor manufacturing systems face challenges in stably supplying multiple process gases at constant flow rates due to pressure fluctuations on the secondary side of the valve, leading to instability in gas supply.
Innovation Solution
A raw material supply system with a first gas supply line controlled by a flow rate controller and a second gas supply line that adjusts flow rates based on pressure differences, allowing for stable supply of precursor gases into the process chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If multiple process gases are supplied through a single supply system with valve switching, then the system complexity is reduced, but the flow rate stability deteriorates due to pressure fluctuations on the secondary side of the valve
Solution Approach 1:
The gas supply system is segmented into multiple independent gas supply lines, each equipped with its own flow rate controller. This allows each gas to be controlled separately, preventing pressure fluctuations in one line from affecting the flow rate stability of other gases, thus resolving the contradiction between system simplicity and flow rate stability.
2Ease of operation
If valve switching is used to supply multiple process gases, then the ease of operation is improved, but the manufacturing precision deteriorates due to unstable flow rates
Solution Approach 1:
Each gas supply line is equipped with a flow rate controller that provides feedback control of the gas flow rate. This ensures that despite any pressure fluctuations or valve switching operations, the actual flow rate of each process gas remains stable and precise, thereby maintaining manufacturing precision and film thickness uniformity while preserving ease of operation.
Data Source
AI summary
There is provided a configuration that includes: a first gas supply line configured to be capable of controlling a flow rate of a first precursor gas, which is generated by a first raw material, by a flow rate controller, and supplying the first precursor gas into the process chamber; and a second gas supply line configured to be capable of supplying a second precursor gas, which is generated by a second raw material, into the process chamber, wherein a flow rate of the second precursor gas is determined based on a pressure difference between a primary-side pressure of the flow rate controller installed at the first gas supply line and a supply pressure of the second precursor gas from the second gas supply line into the process chamber.