Precursor Gas Supply Lines for Stable Chamber Pressure Balance
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Solution Overview
Problem
Existing semiconductor manufacturing systems face challenges in stably supplying multiple process gases at constant flow rates due to pressure fluctuations on the secondary side of the valve, leading to instability in gas supply.
Innovation Solution
A raw material supply system with a first gas supply line controlled by a flow rate controller and a second gas supply line that adjusts flow rates based on pressure differences, allowing simultaneous and stable supply of different precursor gases into the process chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If multiple process gases are supplied by valve switching in the same supply system, then the system complexity is reduced, but the gas supply stability deteriorates due to pressure fluctuations on the secondary side of the valve
Solution Approach 1:
The supply system is segmented into a first gas supply line with a flow rate controller and a second gas supply line without a flow rate controller. This segmentation allows the first gas flow rate to be independently controlled while the second gas flow rate is determined by the pressure difference, resolving the contradiction by dividing the system into functional sections with different control mechanisms.
Solution Approach 2:
The invention changes the control parameter for the second gas supply line from active valve switching to passive pressure difference-driven flow. By utilizing the pressure difference between the primary side of the flow rate controller and the supply pressure of the second precursor gas, the system achieves stable flow rates without active intervention, thereby improving reliability while maintaining simplified system architecture.
2Ease of operation
If a single raw material supply system is used for multiple precursor gases, then the ease of operation is improved, but the manufacturing precision deteriorates due to unstable flow rates affecting film thickness uniformity
Solution Approach 1:
The single supply system is segmented into two distinct gas supply lines: the first line with precise flow rate control and the second line with pressure difference-based flow determination. This segmentation enables both gases to be supplied through a unified system while maintaining precise control over their respective flow rates, thereby preserving manufacturing precision despite operational simplicity.
Solution Approach 2:
The pressure difference between the primary side of the flow rate controller and the second gas supply acts as an intermediary mechanism. This pressure difference indirectly controls the second gas flow rate without requiring direct active control, allowing the system to maintain precise flow rates for both gases while simplifying the overall operation through a unified supply system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Ensures consistent and uniform film thickness on wafers by stabilizing the flow rates of multiple gases, improving in-plane and inter-wafer film thickness uniformity.
Implementation Method 1
a flow rate of the second precursor gas is determined based on a pressure difference between a primary-side pressure of the flow rate controller installed at the first gas supply line and a supply pressure of the second precursor gas
Data Source
AI summary
There is provided a configuration that includes: a first gas supply line configured to be capable of controlling a flow rate of a first precursor gas, which is generated by a first raw material, by a flow rate controller, and supplying the first precursor gas into the process chamber; and a second gas supply line configured to be capable of supplying a second precursor gas, which is generated by a second raw material, into the process chamber, wherein a flow rate of the second precursor gas is determined based on a pressure difference between a primary-side pressure of the flow rate controller installed at the first gas supply line and a supply pressure of the second precursor gas from the second gas supply line into the process chamber.