Precursor Mixing Chamber for Uniform Semiconductor Gap Filling
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Solution Overview
Problem
Existing gap filling fluid-based processes in semiconductor device processing face limitations in controlling the composition of materials and uniformly providing multiple precursors to a substrate, leading to challenges in homogeneous mixing and efficient filling of small gaps.
Innovation Solution
A method and system for mixing a first and second precursor in a controlled manner by maintaining each precursor at specific temperatures, regulating flow rates, and using a mixing chamber to form a precursor mixture, which is then introduced into a reaction chamber to generate a plasma and fill gaps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple precursors are used for compositional tuning, then the range of achievable material compositions is improved, but the difficulty of uniformly providing and homogeneously mixing the precursors increases
Solution Approach 1:
The system divides the precursor delivery into separate precursor vessels (first precursor vessel, second precursor vessel) with individual temperature control and flow regulation for each precursor. This segmentation allows independent control of each precursor's delivery parameters, enabling precise compositional tuning while managing the complexity through modular design.
Solution Approach 2:
The system controls the temperature of each precursor independently (first precursor temperature, second precursor temperature) and regulates the flow rates (first flow rate, second flow rate) to achieve homogeneous mixing. By adjusting these parameters, the system can precisely control the composition of the precursor mixture while maintaining uniform delivery to the reaction chamber.
2Manufacturing precision
If separate precursor vessels with individual temperature control are used, then the precision of precursor mixture composition is improved, but the device complexity increases
Solution Approach 1:
The precursor module is segmented into separate vessels, each with its own temperature control system and flow regulation. This allows precise control of each precursor's vapor pressure and flow rate, achieving high composition precision in the mixed precursor while organizing the complexity into manageable modular units.
Solution Approach 2:
The system incorporates controllers that regulate the temperature and flow rates based on feedback mechanisms, ensuring that the precursor mixture composition remains precise and controlled. The controllers adjust the flow rates and temperatures to maintain the desired composition ratio despite variations in precursor properties.
3Stability of the object's composition
If precursors are provided uniformly to the reaction chamber, then the homogeneity of the formed material is improved, but the difficulty of controlling vapor pressure differences between precursors increases
Solution Approach 1:
The system addresses vapor pressure differences by independently controlling the temperature of each precursor vessel. By adjusting the temperature parameters, the system compensates for inherent vapor pressure differences between precursors, enabling uniform provision of precursors to the reaction chamber and achieving homogeneous material composition.
Solution Approach 2:
The system replaces simple mechanical mixing with a controlled vapor-phase mixing approach. By regulating the vaporization and flow of each precursor separately through temperature and flow control, the system achieves homogeneous mixing without mechanical intervention, simplifying the operation despite the vapor pressure control requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over the composition of gap filling fluids, allowing for uniform distribution and efficient filling of gaps without voids or seams, suitable for manufacturing semiconductor devices.
Implementation Method 1
maintaining the first precursor in the first precursor vessel at a first precursor temperature
Implementation Method 2
maintaining the first precursor in the first precursor vessel at a first precursor temperature
Implementation Method 3
maintaining the second precursor in the second precursor vessel at a second precursor temperature
Implementation Method 4
maintaining the second precursor in the second precursor vessel at a second precursor temperature
Implementation Method 5
providing the first precursor and the second precursor to the mixing chamber
Data Source
AI summary
Aspects described herein provide a method of providing a precursor mixture of a first precursor and a second precursor to a reaction chamber. The method may comprise maintaining the first precursor in the first precursor vessel at a first precursor temperature and the second precursor in the second precursor vessel at a second precursor temperature. Fluid connections may be provided between the first precursor vessel and the mixing chamber, between the second precursor vessel and the mixing chamber, and between the mixing chamber and the reaction chamber. The reaction chamber is separate from the mixing chamber. The precursor mixture is formed in the mixing chamber by mixing the first precursor and the second precursor and then provided to the reaction chamber.