Precursor Pulse Deposition for Uniform Film Coverage on Recessed Substrates

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Solution Overview

Problem

Existing substrate processing methods face challenges in achieving uniform film thickness and step coverage, particularly in forming films on substrates with recesses, due to non-uniform adsorption of intermediates generated from precursor gases.

Innovation Solution

A method involving divisional supply of precursor gas, pre-filling in a storage, and subsequent flash supply into the process chamber, followed by exhaust, to enhance uniform adsorption of intermediates and improve film quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If precursor gas is continuously supplied to form a film on the substrate, then the film formation efficiency is improved, but the in-plane film thickness uniformity deteriorates due to non-uniform adsorption of intermediates

Engineering Contradiction:
Improvefilm formation efficiencyVSAvoidin-plane film thickness uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The precursor gas supply is divided into multiple discrete pulses rather than continuous supply. Each pulse introduces a controlled amount of precursor gas that decomposes to form intermediates, which are then exhausted before the next pulse. This segmentation prevents intermediate accumulation and promotes uniform adsorption across the substrate surface, improving in-plane film thickness uniformity while maintaining film formation efficiency through optimized pulse timing and duration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The film formation process uses periodic cycles of precursor gas supply followed by exhaust phases. The precursor gas is supplied in periodic pulses, allowing intermediates to be introduced, adsorb uniformly onto the substrate, and then be exhausted before the next pulse. This periodic action creates a rhythm of intermediate introduction and removal that ensures uniform distribution across the substrate while maintaining high film formation rates through optimized cycle frequency.

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in improved step coverage and in-plane film thickness uniformity by preferentially adsorbing the first intermediate uniformly across the substrate surface, reducing the adsorption of second intermediates and enhancing film quality.

Implementation Method 1

adsorption of intermediates generated from precursor gases

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

a substrate processing process in which a precursor gas or a reaction gas is supplied to a substrate to form a film on the substrate

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS12351908B2Substrate processing method, recording medium, and substrate processing apparatus
Publication Date: 2025.07.08 KOKUSAI DENKI KK
  • US12351908B2 patent drawing
  • US12351908B2 patent drawing
  • US12351908B2 patent drawing

AI summary

There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas from a precursor gas supply line into a process chamber in which the substrate is accommodated; and (b) supplying a reaction gas into the process chamber in which the substrate is accommodated, wherein in (a), the precursor gas is divisionally supplied to the substrate a first plural number of times, the precursor gas is pre-filled in a storage installed in the precursor gas supply line and then supplied into the process chamber when the precursor gas is supplied for the first time, and an inside of the process chamber is exhausted before supplying the precursor gas for the second time.