Halogen-Free Precursor Step Coverage in Semiconductor Film Formation
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving optimal step coverage and film uniformity during the formation of films on substrates, particularly due to limitations in the thermal decomposition of precursors with specific chemical bonds.
Innovation Solution
A technique involving the thermal decomposition of halogen-free precursors with a predetermined ratio of first and second chemical bonds, where the ratio is 3 or more, at specific temperatures to enhance the formation of intermediate layers that improve step coverage and film uniformity, using a substrate processing apparatus that controls temperature and gas supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a precursor with specific chemical bonds is used for film formation, then film formation is achieved, but step coverage and film uniformity deteriorate
Solution Approach 1:
The precursor molecule is segmented into different chemical bonds with distinct thermal decomposition temperatures. The precursor contains both weak bonds (decomposing at lower temperature) and strong bonds (decomposing at higher temperature), allowing staged decomposition that improves step coverage while maintaining film formation capability
Solution Approach 2:
The invention changes the thermal decomposition parameters of the precursor by selecting specific chemical bonds with different bond energies. By controlling the temperature profile during deposition, the precursor decomposes in stages, first breaking weak bonds to form intermediate layers that improve step coverage, then breaking strong bonds to complete film formation
2Manufacturing precision
If thermal decomposition is performed at high temperature to break strong chemical bonds, then complete film formation is achieved, but step coverage deteriorates due to rapid decomposition
Solution Approach 1:
The thermal decomposition process is segmented into two stages corresponding to the two types of chemical bonds. First, weak bonds decompose at lower temperature to create intermediate layers with good step coverage. Then, strong bonds decompose at higher temperature to complete the film formation, achieving both good step coverage and complete decomposition
Solution Approach 2:
The weak chemical bonds are designed to decompose first at lower temperature as a preliminary action, forming intermediate layers that provide good step coverage. This preliminary decomposition prepares the surface for subsequent complete film formation when strong bonds break at higher temperature
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the step coverage and film thickness uniformity of silicon oxycarbonitride films by dominating surface reaction rates over supply rates, effectively addressing the limitations of existing processes and enhancing film formation on complex substrate structures.
Implementation Method 1
forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature
Data Source
AI summary
There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.