Preheat Ring Support Layout to Prevent Epitaxial Wafer Debris
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Solution Overview
Problem
The existing epitaxial growth apparatuses face issues with debris production between the preheat ring and the lower liner due to thermal expansion differences, leading to potential preheat ring fractures and particle deposition on semiconductor wafers, which is exacerbated by the miniaturization of semiconductor devices.
Innovation Solution
The epitaxial growth apparatus design modifies the supporting structure by eliminating or reducing the supporting portion for the preheat ring in specific regions above the wafer transfer path, creating a gap or recess to prevent debris formation without fracturing the preheat ring, thereby reducing particle deposition on the wafer surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the preheat ring is supported by the lower liner, then the preheat ring is stable during epitaxial growth, but debris is produced due to thermal expansion differences causing friction
Solution Approach 1:
The support structure is segmented into multiple regions: a first region with full support, a second region with partial support, and a third region with no support. This segmentation allows the preheat ring to be stable during epitaxial growth while eliminating friction and debris production in the wafer transfer region.
Solution Approach 2:
Different support characteristics are applied to different regions of the preheat ring based on local requirements. The first region (opposite wafer loading port) provides full support for stability, the second region provides partial support, and the third region (wafer transfer path) provides no support to prevent debris generation during wafer transfer.
2Stability of the object's composition
If the preheat ring is fully supported by the lower liner, then the preheat ring maintains its position, but the preheat ring may fracture due to thermal expansion differences
Solution Approach 1:
The support is divided into regions with different support levels. The first region provides full support for positional stability, while the second and third regions provide reduced or no support, preventing excessive thermal stress and potential fracture of the preheat ring.
Solution Approach 2:
The support characteristics are changed spatially across different regions of the preheat ring. By varying the degree of support from full (first region) to partial (second region) to none (third region), the system accommodates thermal expansion differences and prevents fracture while maintaining necessary position stability.
3Reliability
If continuous support is provided for the preheat ring, then the preheat ring remains stable, but particles are deposited on the wafer surface during transfer
Solution Approach 1:
The support structure is segmented to create a debris-free zone in the third region where wafers pass. By eliminating support in this specific region, friction between the preheat ring and lower liner is prevented, avoiding particle generation that would contaminate wafer surfaces during transfer.
Solution Approach 2:
The support characteristics are optimized locally for different functions: full support in the first region for structural stability, partial support in the second region, and no support in the third region to ensure wafer surface cleanliness during transfer through the wafer loading port.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively prevents debris production between the preheat ring and the lower liner, reducing particle deposition on semiconductor wafers and enhancing the reliability of epitaxial wafer production without compromising the preheat ring's integrity.
Implementation Method 1
a ring-shaped preheat ring 60 is disposed on the outer circumference of the susceptor 4. The preheat ring 60 preheats reactant gas supplied from the gas inlet 17 to the surface of the semiconductor wafer W
Implementation Method 2
The preheat ring 60 preheats reactant gas supplied from the gas inlet 17 to the surface of the semiconductor wafer W
Implementation Method 3
an epitaxial growth apparatus used to vapor deposit an epitaxial layer on a surface of a semiconductor wafer
Data Source
AI summary
Provided is an epitaxial growth apparatus which makes it possible to prevent the production of debris between a preheat ring and a lower liner without fracturing the preheat ring. The epitaxial growth apparatus includes: a chamber; an upper liner and a lower liner that are disposed on an inner wall of the chamber; a susceptor being provided inside the chamber; and a preheat ring that is disposed on a supporting portion protruding in an opening of the lower liner and is disposed on the outer circumference of the susceptor. The preheat ring is not supported by the supporting portion in at least a part of a region that is right above a region where the semiconductor wafer passes in a transfer path in which the semiconductor wafer is loaded into the chamber to be set on the susceptor.