Pre-patterned Lithography Templates for High-Resolution Patterning
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Solution Overview
Problem
Current lithographic patterning processes for semiconductor devices face challenges in achieving high-resolution, high-fidelity patterns efficiently, particularly in forming small feature sizes and integrating complex structures, due to limitations in existing radiation-based patterning techniques and materials.
Innovation Solution
The use of pre-patterned templates with a template hardmask having periodic gaps filled with a filler material, combined with high etch contrast radiation sensitive resists, allows for improved pattern fidelity and resolution by guiding the patterning process with a periodic grid, enabling selective patterning and differential etching of multiple materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic patterning processes are used, then existing fabrication facilities can be utilized, but achieving high-resolution, high-fidelity patterns with small feature sizes becomes difficult
Solution Approach 1:
A pre-patterned template with periodic gaps is formed beforehand on the substrate. This template serves as a guide structure that pre-defines the spatial arrangement of features, enabling subsequent resist materials to be patterned with high precision according to the predetermined grid, thus achieving high-resolution patterns without requiring advanced lithographic tools
Solution Approach 2:
The pre-patterned template acts as an intermediary structure between the substrate and the radiation-sensitive resist. The template's periodic gaps guide the patterning process by providing a physical framework that transfers the pattern to the resist material, enabling high-fidelity pattern formation while using conventional fabrication facilities
2Device complexity
If multiple sequential deposition and etching steps are used to form complex structures, then integrated structures can be achieved, but processing time and complexity increase
Solution Approach 1:
The complex structure formation process is segmented into modular steps: first forming the pre-patterned template with periodic gaps, then performing selective deposition into the gaps, and finally etching to release the final structure. This segmentation allows each step to be optimized independently and enables parallel processing where applicable, reducing overall processing time while maintaining structural complexity
Solution Approach 2:
The template structure is prepared in advance with periodic gaps that are pre-positioned to receive specific materials. This preliminary arrangement eliminates the need for multiple alignment steps during subsequent deposition and etching operations, significantly reducing processing time while enabling the formation of complex integrated structures
3Manufacturing precision
If radiation-sensitive resist materials are used for patterning, then pattern transfer can be achieved, but achieving high etch contrast and differential etching becomes challenging
Solution Approach 1:
The system employs a composite structure consisting of a pre-patterned template, a buffer layer, and a radiation-sensitive resist material. The template provides structural definition while the resist material provides pattern transfer capability. The differential etching properties of the template and resist materials enable high etch contrast, ensuring reliable and consistent pattern transfer to the underlying substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances pattern fidelity and resolution, reduces processing time and costs, and allows for the formation of high-quality, small feature sizes by leveraging the high etch contrast and differential etching properties of the template and resist materials, while maintaining efficient processing within existing fabrication facilities.
Implementation Method 1
The radiation sensitive layer is exposed by the selectively patterned radiation to form an exposed radiation sensitive layer with a latent image
Implementation Method 2
The patterned structure can be etched to selectively remove fill material susceptible to the etching process due to overlap of holes through the patterned layer with the fill material
Data Source
AI summary
High etch contrast materials provide the basis for using pre-patterned template structure with a template hardmask having periodic holes and filler within the holes that provides the basis for rapidly obtaining high resolution patterns guided by the template and high etch contrast resist. Methods are described for performing the radiation lithography, e.g., EUV radiation lithography, using the pre-patterned templates. Also, methods are described for forming the templates. The materials for forming the templates are described.