Pre-programming Adjacent Word Lines for Memory Reliability
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Solution Overview
Problem
Nonvolatile memory devices, such as flash memory, face reliability issues due to the lack of effective methods to ensure data integrity and endurance across word lines, particularly when programming operations are performed without prior validation of adjacent word lines.
Innovation Solution
A program method and memory system that perform a pre-program operation on adjacent word lines before executing a program operation on the selection word line, ensuring data reliability by writing preliminary data and adjusting voltage levels to enhance programming efficiency and endurance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a program operation is performed directly on the selection word line without pre-programming adjacent word lines, then the programming speed is faster, but the reliability of the edge word line deteriorates
Solution Approach 1:
The patent applies preliminary action by performing a pre-program operation on the adjacent word line before executing the main program operation on the selection word line. This preliminary programming of the adjacent word line creates favorable conditions for the subsequent program operation, improving the reliability of the edge word line while maintaining acceptable programming speed through optimized voltage application sequences.
2Reliability
If a pre-program operation is performed on the adjacent word line before the program operation, then the reliability of the selection word line is improved, but the programming time increases
Solution Approach 1:
The patent implements periodic action by dividing the programming process into distinct phases: a pre-program operation phase followed by a main program operation phase. Each phase uses optimized voltage sequences and timing, allowing the system to achieve improved data integrity through the pre-program phase while minimizing total programming time through efficient transition and execution of each periodic stage.
3Reliability
If voltage levels are adjusted to enhance programming efficiency on adjacent word lines, then the retention characteristics are improved, but the energy consumption increases
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting voltage levels during different phases of the programming operation. The pre-program operation uses optimized voltage sequences that differ from the main program operation, allowing improved retention characteristics through controlled voltage application while managing energy consumption through selective voltage level changes rather than sustained high-voltage application.
Data Source
AI summary
A program method of a memory device include determining whether valid data is stored in memory cells of a word line adjacent to a selection word line upon which a program operation is to be performed; when the valid data is not stored in the memory cells of the word line adjacent to the selection word line, performing, based on data to be written to the selection word line, a pre-program operation on the word line adjacent to the selection word line; and after the performing of the pre-program operation, performing, based on a program command, the program operation on the selection word line.