Press-Pack SiC Power Module for Low-Loss Circuit Protection
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Solution Overview
Problem
Existing solid-state circuit breakers (SSCBs) face inefficiencies and bulky cooling systems due to limited semiconductor technologies, particularly in medium-voltage direct current (MVDC) systems, leading to high conduction losses and reduced power density.
Innovation Solution
Employing a plurality of silicon carbide (SiC) field effect transistors (FETs) in a back-to-back press-pack configuration with integrated sensors and a bidirectional supercascode clamping circuit, forming a module called ηPak, which reduces conduction losses and eliminates active cooling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon (Si) integrated gate-commutated thyristors (IGCTs) and insulated-gate bipolar transistors (IGBTs) are used to build SSCBs, then the SSCB can be constructed with conventional semiconductor technologies, but high conduction losses occur due to inherent offset voltages
Solution Approach 1:
The patent transitions from conventional silicon-based IGCTs and IGBTs to silicon carbide (SiC) field effect transistors, changing the material parameter and device type to eliminate inherent offset voltages and reduce conduction losses while maintaining constructability
Solution Approach 2:
The invention uses silicon carbide (SiC) composite material instead of conventional silicon materials, leveraging the superior electrical properties of SiC to achieve lower conduction losses and higher efficiency in SSCB construction
2Ease of manufacture
If conventional semiconductor technologies are used in SSCBs, then the device can be built with existing components, but bulky cooling systems are required due to high power losses
Solution Approach 1:
By changing from silicon-based devices to silicon carbide FETs, the conduction losses are reduced so dramatically that active cooling systems become unnecessary, allowing the use of simpler passive cooling or natural convection methods
Solution Approach 2:
The invention extracts and eliminates the bulky active cooling system from the SSCB design by achieving such low power losses with SiC FETs that complex cooling infrastructure is no longer needed
3Reliability
If silicon-based IGCTs and IGBTs are used in SSCBs, then the technology is proven and reliable, but power density is limited due to high conduction losses
Solution Approach 1:
The patent changes the fundamental material parameter from silicon to silicon carbide and the device type from IGCT/IGBT to FET, achieving up to five times increase in power density while maintaining reliability through the robust nature of SiC technology
Solution Approach 2:
By adopting silicon carbide composite material, the invention achieves higher power density and efficiency while SiC's inherent properties provide reliable and durable operation in high-power applications
Data Source
AI summary
An electronic module is provided, which comprises a plurality of first field effect transistors (FETs), a plurality of second FETs paired with the first FETs, a controller connected to gate nodes of the first and second FETs, and a plurality of spring assemblies disposed between the paired first and second FETs. Each spring assembly has two ends comprises a disc spring that is clamped and at least one conductive path that connects both ends of the spring assembly. One end of the spring assembly is connected to a press-buffer that contacts at least one first FET, while the other end is connected to another press-buffer that contacts at least one second FET.