Pressure-Contact Semiconductor Assembly With Opposite-Side Disc Spring
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Solution Overview
Problem
Conventional pressure-contact-type semiconductor devices face complexity and poor manufacturability due to the placement of the disc spring on the surface including the gate signal input/output part of the semiconductor element.
Innovation Solution
The semiconductor device design includes a semiconductor chip with a guard ring and gate signal input/output part on one surface, a conductive pattern, a contact pin, a plate-like electrode, and a disc spring on the opposite surface, allowing the disc spring to be positioned away from the gate signal input/output part, enhancing manufacturability and assembly ease.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the disc spring is provided on the surface including the gate signal input/output part of the semiconductor element, then the structure can be compact, but the structure becomes complex and manufacturability deteriorates
Solution Approach 1:
The patent relocates the disc spring from the first main surface (where gate signal input/output parts are located) to the second main surface (opposite side) of the semiconductor chip. This spatial repositioning in another dimension resolves the conflict by separating the disc spring's location from the gate signal terminals, thereby simplifying the structure and improving manufacturability while preserving compactness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration simplifies assembly, reduces wiring inductance, and allows for efficient heat dissipation, improving the overall manufacturability and performance of the semiconductor device.
Implementation Method 1
a disc spring being provided on the plate-like electrode
Data Source
AI summary
The present invention has an object to enhance manufacturability of a pressure-contact-type semiconductor device. A pressure-contact-type semiconductor device according to the present invention includes: a semiconductor chip, the semiconductor chip including a guard ring and a gate signal input/output part in the first main surface; a first external electrode being formed on a side of the first main surface of the semiconductor chip; a conductive pattern being formed on the first external electrode; a contact pin connecting the gate signal input/output part and the conductive pattern; a plate-like electrode being provided on the second main surface of the semiconductor chip; a disc spring being provided on the plate-like electrode; and a second external electrode being provided on the disc spring, the second external electrode and the first external electrode interposing the semiconductor chip.