High-Pressure Annealing for Oxide Conversion in High-Aspect Features
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Solution Overview
Problem
In semiconductor device manufacturing, the incomplete conversion of CVD-based materials into oxides within high aspect ratio features, such as shallow trench isolation regions and interlayer dielectric layers, leads to poor film quality and high impurity levels, which can be exacerbated by the difficulty of oxygen diffusion, resulting in incomplete film conversion and increased etch rates.
Innovation Solution
Implementing a high pressure anneal process, either wet or dry, to create a pressurized environment that allows oxygen or other molecules to diffuse deeper and more uniformly into the film, promoting complete conversion and reducing impurities, and using a processing device with an inner and outer shell to manage high pressures and gases effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional anneal processes are used, then oxygen diffusion is limited, but film conversion remains incomplete and impurity levels remain high
Solution Approach 1:
The patent applies parameter changes by transitioning from conventional atmospheric pressure annealing to high pressure annealing (HPA). This parameter change in pressure enables significantly enhanced oxygen diffusion into the film, achieving complete film conversion and reducing impurity levels. The high pressure environment forces oxygen molecules deeper into the material structure, resolving the contradiction between limited diffusion and incomplete conversion.
Solution Approach 2:
The patent utilizes accelerated oxidation through high pressure oxygen environments. By subjecting the film to high pressure oxygen during annealing, the oxidation process is dramatically accelerated and enhanced, ensuring complete conversion of the film material while simultaneously reducing carbon and other impurities. This directly addresses the contradiction by providing both complete conversion and low impurity levels.
2Manufacturing precision
If high pressure anneal is implemented, then film conversion is enhanced and impurities are reduced, but processing complexity increases
Solution Approach 1:
The patent implements multi-functionality by designing the HPA system to simultaneously achieve multiple objectives: enhanced oxygen diffusion, complete film conversion, impurity reduction, and stress control. The high pressure annealing process serves as a multi-functional treatment that addresses multiple film quality issues in a single step, thereby managing processing complexity while delivering comprehensive film quality improvement.
Solution Approach 2:
The patent manages processing complexity through controlled parameter changes. By systematically varying pressure, temperature, and oxygen concentration parameters during HPA, the process optimizes film quality while maintaining controllable complexity. The parameter changes are carefully managed to achieve the desired film properties without requiring excessively complex processing equipment or procedures.
3Temperature
If conventional annealing is used, then thermal budget is high, but diffusion depth is limited
Solution Approach 1:
The patent fundamentally changes the pressure parameter to achieve deeper oxygen diffusion at lower temperatures. By applying high pressure during annealing, oxygen molecules are forced deeper into the film structure without requiring excessive thermal energy. This parameter change resolves the contradiction by enabling deep diffusion while maintaining a controlled thermal budget, as the high pressure compensates for the reduced temperature requirement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The high pressure anneal process enhances film conversion, reduces impurity levels, and improves film quality by allowing deeper and more uniform diffusion of molecules, achieving better results at lower temperatures and reducing thermal budget requirements.
Implementation Method 1
allows oxygen or other molecules to diffuse deeper and more uniformly into the film
Implementation Method 2
create a pressurized environment that allows oxygen or other molecules to diffuse deeper
Implementation Method 3
high pressure anneal process, either wet or dry, to create a pressurized environment
Implementation Method 4
incomplete conversion of CVD-based materials into oxides
Data Source
AI summary
Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.