Semiconductor Priming Plate Recess to Prevent Backside Particle Defects
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Solution Overview
Problem
The semiconductor manufacturing process faces contamination issues due to unwanted particles formed during the priming process, which adhere to the backside of semiconductor structures, leading to defects like defocus and overlay distortion during photolithography, affecting the reliability of the semiconductor structure.
Innovation Solution
A method involving a plate with a recess to support the semiconductor structure, where the priming material is applied with the peripheral portion of the backside in contact with the plate, reducing particle adherence, and a separate heating source is used to prevent damage to the backside during the heating process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the priming process is performed with the semiconductor structure supported on a plate, then the priming material can be applied to the front surface, but unwanted particles are formed and adhere to the backside of the semiconductor structure causing contamination
Solution Approach 1:
The patent extracts the harmful function of the plate by introducing a recess that prevents the plate surface from contacting the backside of the semiconductor structure. This eliminates the source of particle contamination while preserving the plate's supportive function during priming.
Solution Approach 2:
The patent introduces a vertical dimension solution by creating a recess in the plate surface. This dimensional change allows the semiconductor structure to be positioned above the plate surface, preventing contact between the backside and plate while maintaining structural support.
2Productivity
If heating is applied to the semiconductor structure during manufacturing, then the structure can be processed, but the backside of the semiconductor structure may be damaged
Solution Approach 1:
The patent extracts the harmful thermal effect from the backside by using a recessed plate design that creates an air gap. This allows heating to be applied to the front surface without thermal damage to the backside, preserving structural integrity while enabling processing.
Solution Approach 2:
The air gap created by the recess acts as a thermal insulator and intermediary layer, preventing direct heat transfer to the backside of the semiconductor structure while allowing the front surface to be heated for processing.
3Ease of operation
If the backside of the semiconductor structure contacts the plate during priming, then support is provided, but defocus and overlay distortion occur during photolithography
Solution Approach 1:
The patent removes the harmful contact between the backside and plate by creating a recess. This eliminates particles that would cause defocus and overlay distortion during photolithography, while the plate continues to provide necessary support through the recess structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces contamination and prevents defects in the photoresist pattern formation, enhancing the reliability of the semiconductor structure by minimizing unwanted particle formation and ensuring accurate exposure and development.
Implementation Method 1
a separate heating source is used to prevent damage to the backside during the heating process
Data Source
AI summary
A method includes providing a first plate including a first surface, a second surface opposite to the first surface, and a first recess indented from the first surface towards the second surface; providing a semiconductor structure including a third surface, a fourth surface opposite to the third surface, and a first sidewall extending between the third surface and the fourth surface; placing the semiconductor structure over the first plate; and disposing a priming material over the third surface of the semiconductor structure, wherein a peripheral portion of the fourth surface of the semiconductor structure is in contact with the first surface of the first plate upon the disposing of the priming material.