Printed Electronic Device Submicrometer Channel Fabrication
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current techniques for patterning substrates for high-density electronic device arrays, particularly on flexible and non-planar substrates, face challenges in achieving high resolution and yield, especially when using direct printing methods like ink-jet printing, which struggle with scalability and uniformity on nanoscale features.
Innovation Solution
A patterned substrate is created using a self-aligned printing technique where elongate droplets are printed at an angle to the substrate edge, forming a T-shape with a narrow separation, allowing for high-resolution electrode gaps and improved yield, suitable for flexible and non-planar substrates, and enabling the fabrication of field effect transistors and transistor arrays with submicrometer channel lengths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If direct printing techniques like ink-jet printing are used for patterning substrates, then fabrication complexity is reduced and flexible substrates are enabled, but manufacturing precision and yield deteriorate due to inability to achieve high resolution on nanoscale features
Solution Approach 1:
The electrode is segmented into multiple discrete droplets arranged in an elongate plurality along the channel direction. Each droplet acts as an independent conductive unit, and their collective arrangement forms the complete electrode structure. This segmentation enables direct printing methods to achieve nanoscale precision by controlling droplet placement rather than attempting to print continuous fine lines.
Solution Approach 2:
The invention transitions from two-dimensional continuous electrode patterns to a one-dimensional array of discrete droplets. By arranging droplets in an elongate sequence along the channel direction, the patent achieves high-resolution patterning through temporal and spatial separation of droplet deposition, overcoming the resolution limits of direct printing techniques.
2Ease of manufacture
If conventional printing techniques are used to pattern electrodes, then fabrication process is simplified, but device density and channel length reduction are limited
Solution Approach 1:
The invention introduces dynamic control over droplet deposition parameters including size, spacing, and timing. By varying the inter-droplet spacing and droplet dimensions along the channel direction, the process can adapt to different device density requirements without changing the fundamental printing approach, enabling high-density arrays while maintaining fabrication simplicity.
Solution Approach 2:
The patent utilizes parameter changes in droplet characteristics (size, spacing, concentration) to achieve different device densities and channel lengths. By controlling these parameters during the printing process, the same fabrication technique can produce both low-density and high-density device arrays, as well as vary channel lengths for different device performance requirements.
3Speed
If electrode gaps are reduced for high-speed device operation, then device speed increases, but leakage current increases and yield decreases
Solution Approach 1:
The semiconductor material acts as an intermediary between the source and drain electrodes, providing a controlled conduction path. By ensuring proper semiconductor deposition and alignment with the droplet-based electrodes, the invention achieves effective electrical isolation between electrodes when the semiconductor is absent, while enabling controlled conduction when present, thus reducing leakage current despite narrow gaps.
Solution Approach 2:
The droplet-based electrode structure self-aligns with the semiconductor channel through the printing process geometry. The elongate arrangement of droplets naturally defines the electrode edges and separation distance, creating self-aligned structures that maintain consistent gaps without requiring additional alignment steps, thereby reducing leakage while preserving high-speed operation.
Data Source
AI summary
This invention generally relates to a patterned substrate for an electronic device and to electronic devices, device arrays, field effect transistors and transistor arrays comprising the patterned substrate. The invention also relates to a logic circuit, display, memory or sensor device comprising the patterned substrate. Further the invention relates to a method of patterning a substrate for an electronic device. In an embodiment, a patterned substrate for an electronic device comprises: a first body having an edge; a second body comprising an elongate plurality of printed droplets having an edge adjacent to and substantially aligned to said first body edge; and a separation between said first body edge and said second body edge, wherein said elongate plurality of printed droplets is at an angle of about 5 degrees to about 90 degrees to said first body edge.


