Prism-Shaped Sputter Target for High-Deposition Coating
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Solution Overview
Problem
Existing sputter coating systems face limitations in achieving high deposition rates and uniform coating over large areas due to the limited angular arc of target material ejection and restricted dimensions of the high-intensity sputter region, which restricts the size of substrates that can be coated and the overall deposition rate.
Innovation Solution
A sputter coating system utilizing a vacuum chamber with a remote plasma generation system and a prism-shaped sputter target assembly, where a high-density plasma is generated externally and guided to cover the entire target surface, allowing for efficient sputtering of materials across the entire target area without the need for a toroidal magnetic field, and enabling larger target sizes and increased deposition rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a magnetron sputter target assembly with torus shaped magnetic field is used, then plasma density is locally increased and high sputtering rates are achieved, but sputtering is limited to only the ring area within the torus and overall deposition rate is restricted
Solution Approach 1:
The patent extracts the plasma generation function from the target assembly itself and relocates it to an external remote plasma source. This allows the target surface to be fully utilized for sputtering without the geometric constraints of a toroidal magnetic field, enabling the entire target area to contribute to material deposition.
Solution Approach 2:
The patent transitions from localized plasma confinement in a toroidal geometry to a distributed plasma field that can envelop the entire target surface. By using a linear plasma source with magnetic field lines extending along the target length, the sputtering region expands from a two-dimensional ring to a three-dimensional volume covering the full target area.
2Area of stationary object
If the target size is increased to coat larger substrates, then area coverage is improved, but the angular arc of material ejection remains limited and deposition uniformity deteriorates
Solution Approach 1:
The patent segments the plasma interaction region into multiple zones along the target surface, with magnetic field lines distributed to create consistent plasma density across different target areas. This segmentation approach allows each region to contribute uniformly to the deposition process, maintaining coating uniformity even with large target sizes.
3Device complexity
If a simple DC or AC powered parallel plate sputter system is used, then system complexity is reduced, but deposition rates are low and application range is limited
Solution Approach 1:
The patent introduces an intermediary remote plasma source that generates plasma separately and delivers it to the target region. This intermediary plasma source acts as a mediator between the power supply and the target, enabling high deposition rates without requiring complex integrated magnetron structures, thus achieving a balance between system complexity and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in a significant increase in deposition rate and area coverage, achieving deposition rates four times higher than comparable systems, with uniform coating over a larger area, maximizing the use of plasma and allowing for efficient coating of larger substrates.
Implementation Method 1
a plasma may be produced through ionisation of the gas by well known means
Implementation Method 2
ionisation of the gas by well known means
Implementation Method 3
target atoms are ejected from the target surface into the vacuum
Implementation Method 4
magnetic fields can be used to confine or direct plasma electrons
Implementation Method 5
the process takes place within a vacuum chamber
Data Source
AI summary
A sputter coating system comprises a vacuum chamber, means for generating a vacuum in the vacuum chamber, a gas feed system attached to the vacuum chamber, a gas plasma forming system attached to the vacuum chamber, a system for confining and guiding a gas plasma within the vacuum chamber, and a prism-shaped sputter target assembly, with the material to be sputtered forming at least the outer surface of the target assembly and positioned such that the outer surface is surrounded by the plasma within the vacuum chamber. A negative polarity voltage is applied to the surface of the material such that sputtering occurs.


