Probe Card Bump Formation via Dual Etching and Electroplating
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional probe card manufacturing methods require the use of multi-layer ceramic for forming bonding bumps, which is disadvantageous and inefficient.
Innovation Solution
A dual etching process is employed on a silicon substrate or SOI substrate to form a bump and microscopic probe structure, involving multiple mask layers, etching steps, and electroplating to create probe tips and beams, with specific use of CVD TEOS films, KOH and TMAH solutions, and Ti/Cu seed layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional photoresist film pattern is used to define the probe beam region, then the patterning process is simple and easy to carry out, but multi-layer ceramic must be used when forming the bonding bump, which increases material complexity and manufacturing difficulty
Solution Approach 1:
The patent extracts and removes the multi-layer ceramic material from the bonding bump formation process. Instead of using complex multi-layer ceramic, the invention uses a simplified approach where the bonding bump is formed directly on the semiconductor substrate through electroplating of metal layers (Cu, Ni, Pd, or Au), eliminating the need for MLC and reducing material complexity while maintaining ease of patterning
Solution Approach 2:
The patent changes the material parameters and composition of the bonding bump structure. By transitioning from multi-layer ceramic composite materials to simple metal layers (Cu, Ni, Pd, Au) deposited through electroplating, the invention modifies the material parameters to achieve both ease of manufacture and reduced device complexity
2Manufacturing precision
If a dual etching process is used to form the probe tip region and probe beam region, then precise control over the probe structure formation is achieved, but the manufacturing process becomes more complex with multiple mask layers and etching steps
Solution Approach 1:
The patent segments the probe structure formation into distinct regions (probe tip region and probe beam region) defined by separate mask layers. The first mask layer pattern defines the probe beam region while the second mask layer pattern defines the probe tip region, allowing independent etching and precise control over each region's geometry and dimensions
Solution Approach 2:
The patent performs preliminary actions by forming the mask layer patterns and performing etching steps before final probe structure fabrication. The dual etching process is carried out in advance to pre-establish the probe tip region and probe beam region with precise dimensions, facilitating subsequent bonding bump formation and reducing the need for additional corrective steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Facilitates the efficient formation of probe structures with precise control over probe tip and beam formation, enabling effective bonding and reducing material complexity compared to conventional methods.
Implementation Method 1
step (g) is carried out using a KOH solution and a TMAH solution
Implementation Method 2
the step (i) comprises an electroplating process
Implementation Method 3
the first mask layer pattern and the second mask layer pattern comprise a CVD TEOS film
Data Source
AI summary
A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the method of the present invention, a dual etching process of a silicon substrate or an etching process of an SOI substrates is carried out using a sidewall insulating film pattern as an etching mask to facilitate a formation of a bump and microscopic probe structure of the probe card.