Silicon Nitride Probe Guide Material for Wafer-Matched Expansion
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Solution Overview
Problem
Existing silicon nitride composite materials combining ZrO2 with Si3N4 fail to stably achieve a coefficient of thermal expansion equivalent to that of a silicon wafer and high strength, depending on production conditions.
Innovation Solution
Control the content rates of Si3N4 and ZrO2, and the microstructure of the composite material by setting the peak intensity ratio Iβ/(Iα+Iβ) to 0.05 to 0.80, where Iα and Iβ are measured by X-ray powder diffraction, and include additives like MgO, SiO2, and Al2O3 in specific amounts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If ZrO2 and Si3N4 are combined to match thermal expansion coefficient, then thermal expansion property improves, but strength becomes unstable
Solution Approach 1:
The patent applies parameter changes by precisely controlling the mass ratios of components (Si3N4: 35-70%, ZrO2: 25-60%, additives: 0.5-5%) and the peak intensity ratio Iβ/(Iα+Iβ) (0.05-0.80) to achieve stable thermal expansion properties matching silicon wafers while maintaining high bending strength of 400 MPa or more
Solution Approach 2:
The patent employs composite materials by combining Si3N4, ZrO2, and additive components in specific proportions to create a multi-phase ceramic composite that simultaneously achieves matched thermal expansion coefficient and high mechanical strength for probe card applications
2Ease of manufacture
If production conditions are varied to optimize properties, then manufacturing flexibility improves, but property stability deteriorates
Solution Approach 1:
The patent establishes specific parameter ranges for component composition (Si3N4: 35-70%, ZrO2: 25-60%, additives: 0.5-5%) and microstructure (peak intensity ratio Iβ/(Iα+Iβ) = 0.05-0.80) that ensure stable thermal expansion and strength properties while allowing manufacturing flexibility within these defined boundaries
Solution Approach 2:
The patent implements feedback control by using X-ray powder diffraction to measure the peak intensity ratio Iβ/(Iα+Iβ) as a microstructure indicator, providing a quantitative method to monitor and adjust the manufacturing process to maintain consistent material properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Stably achieves a coefficient of thermal expansion equivalent to that of a silicon wafer and high strength, with thermal expansion of 3×10−6/° C. to 6×10−6/° C. and bending strength of 400 MPa or more.
Implementation Method 1
a peak intensity ratio: Iβ/(Iα+Iβ), is 0.05 to 0.80, where Iα denotes the (210) plane peak intensity of αSi3N4, as measured by X-ray powder diffraction, and Iβ denotes the (210) plane peak intensity of βSi3N4, as measured by X-ray powder diffraction
Data Source
AI summary
The present invention provides a silicon nitride composite material and a probe-guiding part, which stably have a coefficient of thermal expansion equivalent to a silicon wafer, and high strength. The silicon nitride composite material of the present invention contains: Si3N4 in an amount of 35% by mass to 70% by mass; ZrO2 in an amount of 25% by mass to 60% by mass; and one or more selected from the group consisting of MgO, SiO2, Al2O3, and Y2O3, in an amount of 0.5% by mass to less than 5% by mass, wherein a peak intensity ratio: Iβ/(Iα+Iβ), is 0.05 to 0.80, where Iα denotes the (210) plane peak intensity of αSi3N4, as measured by X-ray powder diffraction, and Iβ denotes the (210) plane peak intensity of βSi3N4, as measured by X-ray powder diffraction. The probe-guiding part of the present invention comprises a plate-shaped body using the above silicon nitride composite material, wherein the body has a plurality of through-holes and/or slits each for inserting the probe therethrough.