Scanning Probe Microscope Marking for Particle Beam Defect Localization

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Solution Overview

Problem

Scanning probe microscopes and scanning particle beam microscopes have limitations in detecting phase defects in photolithographic masks, as they lack material and topography contrast, making it difficult to accurately analyze and correct such defects.

Innovation Solution

A device and method that utilize a scanning probe microscope to analyze defects and produce marks detectable by a scanning particle beam microscope, allowing for precise localization and correction of phase defects by overlaying data from both systems.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If scanning probe microscopy is used to analyze phase defects, then measurement precision is improved, but ease of operation deteriorates due to the inability to directly detect phase defects without additional marking

Engineering Contradiction:
Improvedefect detection precisionVSAvoidoperational complexity
Core Design Contradiction:
Measurement precisionVSEase of operation

Solution Approach 1:

The patent applies preliminary action by first analyzing the defect with scanning probe microscopy to obtain precise positional information, then using this information to guide subsequent particle beam microscopy operations. The defect analysis data is stored and used to pre-position the particle beam for correction, eliminating the need for real-time detection during correction and simplifying the operational process.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses an intermediary approach by introducing a coordinate system transformation mechanism that bridges the two microscopy systems. The scanning probe microscopy data is transformed into particle beam microscopy coordinates, allowing seamless integration of the two systems without requiring complex real-time coordination, thus improving ease of operation while maintaining measurement precision.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If multiple microscopy systems are integrated for comprehensive defect analysis, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improvedefect analysis reliabilityVSAvoidsystem integration complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the defect analysis process into distinct functional modules: scanning probe microscopy for precise defect detection, particle beam microscopy for defect correction, and a coordinate transformation module for integrating the two systems. Each module operates independently with well-defined interfaces, reducing overall system complexity while maintaining high reliability through specialized optimization of each component.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements universality by creating a unified defect analysis and correction system that can handle multiple defect types and analysis requirements through a single integrated platform. The system uses a common coordinate system and data format that allows both scanning probe and particle beam microscopy to work together seamlessly, reducing the need for separate specialized systems and thereby reducing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS11733186B2Device and method for analyzing a defect of a photolithographic mask or of a wafer
Publication Date: 2023.08.22 CARL ZEISS SMT GMBH
  • US11733186B2 patent drawing
  • US11733186B2 patent drawing
  • US11733186B2 patent drawing

AI summary

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.