Semiconductor Probe Unit GND Terminal Segmentation

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Solution Overview

Problem

The nanoprober device faces spatial and structural constraints, making it difficult to perform high-frequency defect analysis of miniaturized semiconductor devices, as existing methods risk damaging the measurement probes and cannot effectively short-circuit the GND line without obstructing the electron beam path or increasing measurement errors due to impedance disturbances.

Innovation Solution

A semiconductor inspection device with a vacuum chamber, electron optical system, and probe units that include a measurement probe and a GND terminal, where the GND terminal is in contact with an electrode on the sample table to short-circuit the GND line, allowing for high-frequency signal transmission while minimizing probe damage and impedance issues.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a coaxial cable with short-circuit line is used for high frequency signal transmission, then high frequency characteristics are improved, but the measurement probe is more susceptible to damage and impedance disturbance increases

Engineering Contradiction:
Improvehigh frequency signal transmission capabilityVSAvoidmeasurement probe integrity and measurement accuracy
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent divides the GND connection into two separate contact points: one on the sample surface and another on a protruding structure. This segmentation allows the GND line to be effectively short-circuited without requiring a long parallel short-circuit line near the probe, thereby maintaining high frequency characteristics while reducing probe damage risk and impedance disturbance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The protruding structure serves as an intermediary element that facilitates the GND short-circuit connection. By providing a dedicated contact point on this structure, the system achieves effective GND reference for high frequency measurements without directly placing the short-circuit line adjacent to the measurement probe, thus resolving the contradiction between high frequency performance and probe safety.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of operation

If the short-circuit line is made longer to connect GND lines of opposing coaxial cables, then ease of connection is improved, but high frequency characteristics deteriorate

Engineering Contradiction:
ImproveGND line connection feasibilityVSAvoidhigh frequency signal transmission capability
Core Design Contradiction:
Ease of operationVSSpeed

Solution Approach 1:

The GND connection path is segmented into multiple short segments rather than one long continuous line. The first contact point connects to the sample surface and the second contact point connects to the protruding structure, creating multiple short GND segments that collectively achieve the short-circuit effect without requiring a long single line.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent utilizes the vertical dimension by introducing a protruding structure that extends upward from the sample surface. This allows the second GND contact point to be positioned in three-dimensional space, enabling effective GND connection without extending the horizontal distance and thus avoiding long short-circuit lines that would degrade high frequency characteristics.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Productivity

If multiple measurement probes are used for simultaneous measurement, then productivity is improved, but measurement errors increase due to different short-circuit line lengths

Engineering Contradiction:
Improvemulti-probe measurement capabilityVSAvoidmeasurement consistency across multiple probes
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

The protruding structure serves as a universal GND reference point for all measurement probes. Each probe can independently contact this common structure, ensuring that all probes have the same reference potential and identical GND connection characteristics, thereby eliminating measurement errors caused by varying short-circuit line lengths while enabling multi-probe simultaneous measurement.

Inventive Principle:
Principle #6Universality (Multi-functionality)

4Measurement precision

If the nanoprober device is used for miniaturized device measurement, then measurement precision is improved, but the device complexity increases due to spatial constraints

Engineering Contradiction:
Improvefine-structured device analysis capabilityVSAvoidspatial arrangement complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent introduces a vertical dimension with the protruding structure to resolve spatial constraints in the horizontal plane. This three-dimensional arrangement allows the GND contact points to be positioned optimally without increasing horizontal complexity, thereby maintaining measurement precision for miniaturized devices while simplifying the overall spatial configuration.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables high-speed defect analysis of fine-structured devices with improved high-frequency response analysis capabilities, reducing measurement errors and maintaining probe integrity by optimizing the GND terminal's contact pressure and shape for precise contact within the nanoprober's spatial constraints.

Implementation Method 1

an electron beam is emitted from above the sample

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Implementation Method 2

the GND terminal comes into contact with the electrode

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS11513138B2Semiconductor inspection device and probe unit
Publication Date: 2022.11.29 HITACHI HIGH TECH CORP
  • US11513138B2 patent drawing
  • US11513138B2 patent drawing
  • US11513138B2 patent drawing

AI summary

Provided is a semiconductor inspection device capable of high-speed response analysis as defect analysis of a fine-structured device constituting an LSI. Therefore, the semiconductor inspection device includes a vacuum chamber 3, a sample table 4 which is disposed in the vacuum chamber and on which a sample 6 is placed, an electron optical system 1 disposed such that an electron beam is emitted from above the sample, a plurality of probe units 24 connected to external devices 11 and 12 disposed outside the vacuum chamber via a coaxial cable 10, and an electrode 5 provided on or in the vicinity of the sample table. The probe unit 24 includes a measurement probe 8 configured to come into contact with the sample, a GND terminal 9 configured to come into contact with the electrode 5, and a probe holder 7 configured to hold the measurement probe and the GND terminal, connect a signal line of the coaxial cable to the measurement probe, and connect a GND line of the coaxial cable to the GND terminal. When the measurement probe of the probe unit comes into contact with the sample, the GND terminal comes into contact with the electrode.