Semiconductor Probe Test Head With Wind Shielding Against Discharge

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Solution Overview

Problem

Existing test apparatuses for semiconductor devices face issues with probe deformation and discharge near the wafer surface due to the application of high voltages and large currents, leading to unreliable electrical characteristic tests.

Innovation Solution

A test apparatus with a wind protection wall and gas supply system that surrounds the probes, containing the inner parts of the probes in a protected space and injecting gas towards the wafer to prevent discharge and deformation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If gas is injected to prevent discharge, then discharge near the wafer surface is reduced, but the probes are deformed by the gas flow

Engineering Contradiction:
Improvedischarge near wafer surfaceVSAvoidprobe shape
Core Design Contradiction:
Object-affected harmful factorsVSShape

Solution Approach 1:

The space around the probes is segmented into two regions: a wind protection space enclosed by the wind protection wall where probes are protected from gas flow, and an external region where gas is supplied to prevent discharge. This spatial segmentation allows simultaneous protection of probes and prevention of discharge.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The wind protection wall acts as an intermediary structure that blocks the gas flow from directly contacting the probes. It mediates between the gas supply (needed for discharge prevention) and the probes (needed for electrical contact), allowing the gas to flow beneath the wall while keeping the probes sheltered.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If thin wire probes are used to increase pin count, then more electrical contacts are achieved, but the probes become prone to deformation

Engineering Contradiction:
Improvepin countVSAvoidprobe strength
Core Design Contradiction:
Adaptability or versatilityVSStrength

Solution Approach 1:

The wind protection wall is installed in advance to counteract the harmful effect of gas flow on the probes before the gas supply is activated. This preliminary protective structure prevents the gas from deforming the thin wire probes, enabling the use of high-pin-count thin probes without compromising their structural integrity.

Inventive Principle:
Principle #9Preliminary anti-action

3Reliability

If high voltage is applied for electrical characteristic inspection, then test capability is improved, but discharge occurs near the wafer surface

Engineering Contradiction:
Improveelectrical characteristic test capabilityVSAvoiddischarge near wafer surface
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The gas supply, which could potentially cause probe deformation, is redirected to flow beneath the wind protection wall. The harmful gas flow is converted into a beneficial discharge-preventing barrier between the high-voltage probes and the wafer surface, allowing high-voltage testing without discharge damage.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus reduces probe deformation and discharge, enhancing the reliability of electrical characteristic tests by ensuring stable probe contact and inhibiting discharge near the wafer surface.

Implementation Method 1

The gas supply part supplies gas in a direction toward the stage

Methodology Applied
Scientific EffectGas flow:

Implementation Method 2

The wind protection wall circumferentially surrounds the plurality of probes. The inner parts are contained in a wind protection space surrounded by the wind protection wall

Methodology Applied
Scientific EffectPhysical containment: Physical Containment

Implementation Method 3

A plurality of probes each include a tip contactable with the semiconductor device

Methodology Applied
Scientific EffectElectrical contact: Conduction (electrical)

Data Source

PatentUS12618897B2Test apparatus for semiconductor device and method of manufacturing semiconductor device
Publication Date: 2026.05.05 MITSUBISHI ELECTRIC CORP
  • US12618897B2 patent drawing
  • US12618897B2 patent drawing
  • US12618897B2 patent drawing

AI summary

Provided is a test apparatus for a semiconductor device which enhances the reliability of a test on electrical characteristics. The test apparatus includes a stage, a probe holder, probes, a wind protection wall, and a gas supply part. The stage is capable of holding a semiconductor wafer in which the semiconductor device is formed. The probe holder is disposed above the stage. The probes each include a tip contactable with the semiconductor device, and are held by the probe holder. The wind protection wall circumferentially surrounds the probes. The gas supply part is disposed outside the wind protection wall. The gas supply part supplies gas in a direction toward the stage. Each of the probes includes an inner part closer to a base end than to the tip. The inner parts are contained in a wind protection space surrounded by the wind protection wall.