Process Chamber Gas Passage Layout for Uniform Substrate Supply

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Solution Overview

Problem

Existing substrate processing apparatuses experience variations in process gas supply amounts across the surface of substrates due to vortex flows around the inner walls of process chambers.

Innovation Solution

The apparatus includes a process chamber with a first flow passage along the inner wall and a second flow passage beside the first, where the second flow passage is extended to ensure the process chamber's center is within its extended region, thereby uniformizing gas supply.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If process gas is supplied toward the outer periphery of the substrate, then gas supply to the substrate surface is achieved, but variations in supply amount occur between the center and outer periphery of the substrate

Engineering Contradiction:
Improveprocess gas supply amountVSAvoiduniformity of gas supply across substrate surface
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The gas supply system is divided into multiple flow passages (first flow passage along the inner wall and second flow passage beside it) that independently supply gas to different regions of the substrate. This segmentation allows separate control of gas distribution to achieve uniform supply across the substrate surface.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different flow passages are configured with different characteristics to address local gas supply needs. The first flow passage supplies gas along the inner wall region while the second flow passage supplies gas toward the center region, creating locally optimized gas distribution that results in overall uniformity.

Inventive Principle:
Principle #3Local quality

2Speed

If vortex flow occurs around the inner wall of the process chamber, then gas circulation is enhanced, but variations in gas supply amount occur between center and outer periphery

Engineering Contradiction:
Improvegas flow circulationVSAvoidgas supply uniformity
Core Design Contradiction:
SpeedVSManufacturing precision

Solution Approach 1:

The second flow passage is configured to supply gas in a direction that counteracts the vortex flow effect before it causes significant non-uniformity. By introducing gas flow from the side toward the center region, the system preemptively balances the gas distribution caused by wall-attached vortex flow.

Inventive Principle:
Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses variations in process gas supply across the substrate surface, improving processing uniformity and efficiency.

Implementation Method 1

a first flow passage through which a gas is supplied to the process chamber along an inner wall surface of the process chamber

Methodology Applied
Scientific EffectGas flow:

Implementation Method 2

a second flow passage, through which the gas is supplied to the process chamber, arranged beside the first flow passage, wherein the second flow passage is configured such that a center of the process chamber is located within an extended region created by extending the second flow passage further toward the process chamber

Methodology Applied
Scientific EffectGas flow:

Data Source

PatentUS20250201584A1Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
Publication Date: 2025.06.19 KOKUSAI DENKI KK
  • US20250201584A1 patent drawing
  • US20250201584A1 patent drawing
  • US20250201584A1 patent drawing

AI summary

It is possible to suppress variations in a supply amount of a process gas within a surface of a substrate. There is provided a technique that includes: a process chamber in which a substrate is processed; a substrate support configured to support the substrate; a first flow passage through which a gas is supplied to the process chamber along an inner wall surface of the process chamber; and a second flow passage, through which the gas is supplied to the process chamber, arranged beside the first flow passage, wherein the second flow passage is configured such that a center of the process chamber is located within an extended region created by extending the second flow passage further toward the process chamber.