Process Chamber with Segmented Gas Regions for Uniform Deposition
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Solution Overview
Problem
Existing substrate processing methods in lateral flow chambers face issues with backside deposition, leading to uneven material distribution and reduced deposition quality due to the use of non-reactive purge gases that disrupt the flow of process gases, causing turbulent flow and requiring additional processing steps to correct defects.
Innovation Solution
The implementation of separate process gas and purge gas regions within the chamber, each with dedicated inlets and outlets, allows for independent control of gas flow and pressure, preventing backside deposition by maintaining uniform gas flow and deposition on the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a non-reactive purge gas is provided from a lower portion of the chamber to prevent backside deposition, then backside deposition is reduced, but the deposition quality on the upper surface of the substrate deteriorates due to turbulent flow
Solution Approach 1:
The chamber is divided into separate process gas and purge gas regions with dedicated inlets and outlets. The process gas region has a process gas inlet above the substrate support and a process gas outlet below the substrate support, while the purge gas region has a purge gas inlet below the substrate support and a purge gas outlet above the substrate support. This segmentation prevents the purge gas from disrupting the process gas flow, eliminating turbulent flow while maintaining prevention of backside deposition.
2Object-affected harmful factors
If purge gas flows upward through the gap between chamber wall and substrate support to prevent process gas from traveling below, then backside deposition is prevented, but flow uniformity of process gas decreases
Solution Approach 1:
The gas flow paths are segmented into separate regions. The process gas outlet is positioned below the substrate support to exhaust process gas before it can travel below the substrate, while the purge gas inlet is also below the substrate support but flows in the opposite direction (upward) to prevent backside deposition. This segmentation allows both functions to operate independently without interfering with each other's flow uniformity.
3Object-affected harmful factors
If upward-directed purge gas is used to block process gas, then backside deposition is reduced, but turbulent flow is caused in process gas
Solution Approach 1:
Instead of having the purge gas flow upward to block process gas from below, the process gas outlet is positioned below the substrate support to exhaust process gas in the downward direction. This inversion of the exhaust location allows process gas to be removed before it can cause backside deposition, eliminating the need for upward-directed purge gas and the resulting turbulent flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces backside deposition and enhances deposition uniformity, ensuring higher quality substrates by preventing purge gas interference with process gas flow, thus minimizing the need for additional processing corrections.
Implementation Method 1
The process gas is thermally decomposed to deposit a material on the substrate
Data Source
AI summary
Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.