Process Container Inner Wall Modification for Semiconductor Film Quality
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Solution Overview
Problem
During the substrate processing for semiconductor device manufacturing, source gases adsorbed on the inner walls of the process container can react with atmospheric water, forming reaction byproducts that deposit as films, which are prone to exfoliation and contaminate the substrate, degrading the semiconductor device quality and reducing yield.
Innovation Solution
A method involving a substrate processing apparatus that uses a combination of oxygen-containing and hydrogen-containing gases under reduced pressure to perform modification treatments on the byproducts within the process container, both with and without the substrate present, to stabilize the deposition films and prevent contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thin film is formed by supplying source gas containing halogen element into the process container, then the thin film is formed on the substrate, but the source gas adsorbed on the inner wall reacts with atmospheric water to form reaction byproducts that deposit as films prone to exfoliation, causing foreign materials to contaminate the substrate
Solution Approach 1:
A modification treatment is performed on the inner wall of the process container before substrate processing to convert adsorbed source gas into stable compounds. This preliminary action prevents the formation of exfoliable reaction byproduct films during subsequent substrate processing, thereby eliminating foreign material contamination while maintaining film quality
Solution Approach 2:
The harmful reaction between adsorbed source gas and atmospheric water is converted into a beneficial process by intentionally supplying oxygen-containing gas to the inner wall before substrate processing. This converts the potentially harmful adsorbed source gas into stable oxide compounds, preventing exfoliation and foreign material generation while maintaining the desired thin film formation on substrates
2Manufacturing precision
If the process container is cleaned frequently to remove foreign materials, then the substrate quality is maintained, but the productivity is reduced due to increased maintenance time
Solution Approach 1:
The inner wall modification treatment is performed as a preliminary step before substrate processing to prevent foreign material formation. This proactive approach eliminates the need for frequent cleaning interruptions, maintaining both substrate quality and production continuity, thereby improving productivity without compromising yield rate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the generation of foreign particles, enhances the quality of semiconductor devices by preventing film exfoliation, and improves yield rates while reducing the frequency of chamber cleaning and maintenance.
Implementation Method 1
supplying an oxygen-containing gas and a hydrogen-containing gas into the heated process container under a pressure less than an atmospheric pressure to perform a modification treatment to a byproduct adhered to an inside of the process container
Implementation Method 2
some of the source gas may be adsorbed (or adhered) onto an inner wall, etc. of the process container
Implementation Method 3
The source gas adsorbed onto the inner wall, etc. of the process container may react with the water (H2O) in the air (atmosphere) that penetrates into the process container
Implementation Method 4
A film which is formed by the deposition of the reaction byproduct containing the halogen element
Implementation Method 5
supplying an oxygen-containing gas and a hydrogen-containing gas into the heated process container under a pressure less than an atmospheric pressure
Data Source
AI summary
A method of manufacturing a semiconductor device includes carrying a substrate into a process container, forming a thin film on the substrate by supplying a source gas into the process container with the substrate accommodated therein, performing a first modification treatment to a byproduct adhered to an inside of the process container by supplying an oxygen-containing gas and a hydrogen-containing gas into the heated process container under a pressure less than an atmospheric pressure, while accommodating the thin film-formed substrate in the process container, carrying the thin film-formed substrate out of the process container, and performing a second modification treatment to the byproduct adhered to the inside of the process container after the first modification treatment by supplying an oxygen-containing gas and a hydrogen-containing gas into the heated process container under the pressure less than the atmospheric pressure, while not accommodating the substrate in the process container.