Process Gas Cooling Layout for High-Aspect-Ratio Plasma Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing plasma etching technologies face challenges in achieving a high etching aspect ratio and maintaining process gas temperature control without affecting the temperature of the plasma etching apparatus components.
Innovation Solution
A plasma etching apparatus with a gas cooling device outside the chamber to control process gas temperature, using temperature and pressure sensors to adjust coolant flow, ensuring ion straightness and maintaining chamber component temperatures constant.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If process gas temperature is controlled to improve ion straightness, then etching precision improves, but apparatus component temperature stability may be affected
Solution Approach 1:
The patent segments the temperature control function into a separate gas cooling device that only cools the process gas. This segmentation allows the process gas temperature to be controlled independently from the chamber and component temperatures, improving ion straightness while maintaining component temperature stability.
Solution Approach 2:
The gas cooling device acts as an intermediary that selectively cools only the process gas before it enters the chamber. This mediator prevents thermal interference with the chamber components, allowing process gas temperature control without compromising component temperature stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Increases etching aspect ratio by controlling process gas temperature, enhancing ion straightness while preserving the etching process's homeostasis and component stability.
Implementation Method 1
a gas cooling device coupled to the gas line from outside the chamber. The gas cooling device includes a gas flow path that the process gas passes through and a cooling flow path that a coolant passes through
Implementation Method 2
A gas cooling device is disposed outside the chamber and cooling the process gas supplied from the gas box to the chamber
Implementation Method 3
A chiller supplies the coolant to the cooling flow path to cool the process gas passing through the gas flow path
Implementation Method 4
A plasma generator generates a plasma from the process gas inside the chamber
Implementation Method 5
An electrostatic chuck fixes a wafer substrate in the chamber to etch the wafer substrate
Data Source
AI summary
A plasma etching device includes a chamber receiving a wafer substrate. The wafer substrate is etched inside the chamber. A gas supply device includes a gas box storing a process gas and a gas line transferring the process gas from the gas box to the chamber. A plasma generator generates a plasma from the process gas inside the chamber. A gas cooling device is disposed outside the chamber and cooling the process gas supplied from the gas box to the chamber. The gas line includes an inlet line supplying the process gas from the gas box to the gas cooling device to cool the process gas. An outlet line supplies the cooled process gas from the gas cooling device to the chamber.