Process Vessel Buffer Gap Layout for Particle-Safe Exhaust

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

By-products accumulate in the process chamber due to stagnation of exhaust gases, leading to particle generation during substrate processing in semiconductor manufacturing.

Innovation Solution

The substrate processing apparatus includes an inner tube with a first buffer structure and an outer tube, where the gap between the first buffer structure and the outer tube is narrower than the gap between the inner and outer tubes, along with a second buffer structure to suppress gas reversal and enhance exhaust efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the gap between the inner tube and outer tube is made large to facilitate gas exhaust, then exhaust efficiency is improved, but gas diffusion and stagnation increase leading to particle generation

Engineering Contradiction:
Improveexhaust efficiencyVSAvoidparticle generation
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by creating different gap widths in different regions: a first gap with narrower width near the first buffer structure and a second gap with wider width near the opening. This localized variation optimizes both exhaust efficiency and particle suppression by matching gap dimensions to local flow requirements.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The gap between the inner tube and outer tube is segmented into multiple regions with different width characteristics. The first gap region and second gap region are distinct segments that serve different functions: the first gap prevents gas reversal while the second gap facilitates exhaust flow.

Inventive Principle:
Principle #1Segmentation

2Object-generated harmful factors

If buffer structures are added to suppress gas reversal, then particle generation is reduced, but device complexity increases

Engineering Contradiction:
Improveparticle generationVSAvoidstructure complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The first buffer structure and second buffer structure are nested within the existing inner tube and outer tube assembly. The buffer structures utilize the available space between the tubes, integrating additional functionality into the existing structural envelope without requiring separate external components.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The buffer structures serve multiple functions: they suppress gas reversal, reduce particle generation, and utilize existing structural space. The first buffer structure specifically addresses gas reversal suppression while the second buffer structure supports both gas flow management and structural integrity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration minimizes gas diffusion and stagnation, reducing particle generation and improving the exhaust process efficiency in semiconductor manufacturing.

Implementation Method 1

This configuration minimizes gas diffusion and stagnation

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 2

a width of a first gap formed between an outer wall of the first buffer structure and the outer tube is set to be narrower than a width of a second gap formed between the inner tube and the outer tube

Methodology Applied
Scientific EffectPressure gradient: Pressure Gradient

Data Source

PatentUS20260022456A1Process Vessel, Processing Apparatus, Substrate Processing Method and Method of Manufacturing Semiconductor Device
Publication Date: 2026.01.22 KOKUSAI DENKI KK
  • US20260022456A1 patent drawing
  • US20260022456A1 patent drawing
  • US20260022456A1 patent drawing

AI summary

There is provided a technique including: an inner tube provided with an opening through which a process gas is exhausted from a process chamber and a first buffer structure in which a first supplier of the process gas into the process chamber is disposed; an outer tube disposed outside the inner tube; and a second buffer structure provided along the outer tube to be opposite to the opening with the first buffer structure interposed therebetween and surrounded by the inner tube, the outer tube and a side wall of the first buffer structure. When viewed from above, a width of a first gap between an outer wall of the first buffer structure and the outer tube is set to be narrower than a width of a second gap between the inner tube and the outer tube within a region extending from beside the first buffer structure to the opening.