Process Vessel Cooling for Defect-Free Semiconductor Cleaning
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Solution Overview
Problem
The existing semiconductor manufacturing processes face downtime and reduced operating rates due to the need to lower the inner temperature of the process vessel after high-temperature film processing, which can lead to defects during cleaning with a cleaning gas at high temperatures.
Innovation Solution
A method involving heating a substrate to a first temperature, cooling a low-temperature structure within the process vessel using a coolant flow path, and then cleaning the structure with a cleaning gas at a lower temperature to prevent defects, while maintaining the coolant flow path as a vacuum heat insulator during film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the inner temperature of the process vessel is lowered before performing the cleaning process, then defects during cleaning are prevented, but the downtime of the substrate processing apparatus increases
Solution Approach 1:
The process vessel is divided into two thermal zones: a high-temperature region for substrate processing and a low-temperature region for cleaning. The coolant flow path is strategically positioned to cool only the necessary components (process vessel wall, seal, and viewport) while leaving the substrate support and processing area at high temperature. This segmentation allows simultaneous high-temperature processing and low-temperature cleaning without requiring overall system cooling, thus reducing downtime while preventing defects.
2Productivity
If the cleaning process is performed at high temperature, then the operating rate is improved, but defects occur in certain locations
Solution Approach 1:
Different components of the process vessel have different temperature requirements. The patent applies local quality by providing targeted cooling to specific components (the process vessel wall, seal, and viewport) through a dedicated coolant flow path, while maintaining high temperature in the substrate processing area. This allows the cleaning gas to be supplied at conditions that prevent defects in the cooled regions without compromising the overall operating rate.
3Temperature
If the coolant flow path is provided in the process vessel, then selective cooling is achieved, but the device complexity increases
Solution Approach 1:
The coolant flow path is designed to serve multiple functions simultaneously: it cools the process vessel wall, the seal, and the viewport, all through a single integrated cooling system. This multi-functionality reduces the need for separate cooling systems for each component, thereby limiting the increase in device complexity while achieving effective selective cooling of all temperature-sensitive parts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach shortens downtime and improves the operating rate of the substrate processing apparatus by preventing defects during the cleaning process and maintaining the integrity of corrosion prevention coatings.
Implementation Method 1
a temperature of a process vessel wall, a seal, and a viewport is lower than a substrate temperature in the film formation
Implementation Method 2
maintaining the coolant flow path as a vacuum heat insulator during film formation
Data Source
AI summary
According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b).