Process Vessel Pre-Coating Cycles to Suppress Semiconductor Particles
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Solution Overview
Problem
During the manufacturing process of semiconductor devices, the accumulation of films on the inner walls of substrate processing apparatuses leads to film peeling and particle generation, which affects process efficiency and quality.
Innovation Solution
A technique involving the sequential supply of multiple process gases, including a first metal-containing gas, a Group 15 element gas, and a Group 14 element gas, within specific cycles to form pre-coating films on the apparatus's inner surfaces, adjusting the number of cycles based on previous executions to control film composition and prevent peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If film is formed on substrate in process vessel, then film formation on substrate is achieved, but film accumulates on inner wall of process vessel causing peeling and particle generation
Solution Approach 1:
A pre-coating film is formed on the inner wall of the process vessel before substrate processing by supplying process gas in advance. This preliminary action creates a protective layer that prevents subsequent film accumulation and peeling during normal operation, thereby eliminating particle generation while maintaining film formation quality on substrates
Solution Approach 2:
The supply amount of process gas is dynamically adjusted based on the number of times substrate processing has been performed. As processing cycles increase, the pre-coating film thickness decreases, so the process gas supply amount is increased to maintain optimal pre-coating thickness. This parameter change ensures continuous prevention of film peeling and particle generation throughout extended operation periods
2Productivity
If film is continuously formed on substrate, then production throughput is improved, but film accumulates on process vessel wall leading to peeling
Solution Approach 1:
The pre-coating film is formed in advance on the process vessel inner wall before substrate processing begins. This preliminary protective layer remains in place during continuous substrate processing, preventing film peeling even as production throughput increases, thereby maintaining film adhesion stability throughout extended high-volume operation
Solution Approach 2:
The process gas supply amount is controlled based on feedback from the number of substrate processing cycles performed. As processing continues and pre-coating film thickness naturally decreases, the system automatically increases gas supply to maintain optimal thickness, ensuring continuous reliability and preventing peeling during high-volume production
3Reliability
If pre-coating film thickness is increased to prevent peeling, then film adhesion is improved, but surface roughness and non-uniformity increase
Solution Approach 1:
The process gas supply amount is precisely controlled and dynamically adjusted based on the number of substrate processing cycles. This parameter control maintains the pre-coating film thickness within an optimal range that provides sufficient adhesion while preventing excessive thickness that would cause surface roughness and non-uniformity
Solution Approach 2:
Instead of applying a uniformly thick pre-coating layer, the system supplies process gas in controlled amounts to create a thin, uniform pre-coating film that is sufficient for adhesion purposes. This partial action approach achieves the minimum necessary thickness for reliability without the excess that would degrade surface quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses particle generation, improves film uniformity and quality, and enhances the manufacturing throughput by stabilizing the film thickness and reducing surface roughness.
Implementation Method 1
supplying a first process gas to a process vessel; supplying a second process gas different from the first process gas to the process vessel; supplying a third process gas different from each of the first process gas and the second process gas to the process vessel
Data Source
AI summary
There is provided a technique that includes: (a) supplying a first process gas to a process vessel; (b) supplying a second process gas different from the first process gas to the process vessel; (c) supplying a third process gas different from each of the first process gas and the second process gas to the process vessel; (d) performing a first cycle X times, the first cycle including performing (a) and (b); (e) performing a second cycle Y times, the second cycle including performing (d) and (c); and (f) changing X in a next execution of the second cycle according to the number of previous executions of the second cycle in (e).