Process Vessel Preheating With Thermal Gradient to Suppress Particles

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Solution Overview

Problem

The generation of particles in process vessels during substrate processing in semiconductor manufacturing is a challenge that existing technologies have not adequately addressed.

Innovation Solution

A technique involving pre-heating the process vessel with a predetermined thermal gradient without loading a substrate, followed by substrate processing, to prevent rapid temperature elevation and subsequent particle generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the process vessel is heated rapidly to improve processing efficiency, then the throughput is improved, but particles are generated in the process vessel

Engineering Contradiction:
ImprovethroughputVSAvoidparticle generation
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent applies preliminary action by performing a pre-heating process before the main substrate processing. The pre-heating step heats the process vessel to a predetermined temperature while maintaining a controlled thermal gradient, preparing the vessel in advance to prevent particle generation during subsequent high-temperature processing without compromising throughput

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent applies parameter changes by controlling the thermal gradient during pre-heating. Specifically, the thermal gradient is maintained at 10°C/mm or less in the radial direction and 5°C/mm or less in the axial direction, which prevents excessive stress and particle generation while still achieving the necessary temperature elevation for efficient processing

Inventive Principle:
Principle #35Parameter changes

2Loss of time

If the thermal gradient is increased to reduce pre-heating time, then the productivity is improved, but the temperature distribution becomes uneven causing particle generation

Engineering Contradiction:
Improvepre-heating timeVSAvoidtemperature distribution uniformity
Core Design Contradiction:
Loss of timeVSManufacturing precision

Solution Approach 1:

The patent optimizes the thermal gradient parameters to balance heating speed and temperature uniformity. By setting the radial thermal gradient at 10°C/mm or less and axial thermal gradient at 5°C/mm or less, the system achieves sufficient pre-heating speed while maintaining uniform temperature distribution that prevents particle generation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements feedback control by monitoring the thermal gradient during pre-heating and adjusting heating conditions to maintain the gradient within specified limits. This ensures consistent temperature distribution and prevents particle generation while minimizing pre-heating time

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses particle generation in the process vessel, improves throughput, and maintains consistent temperature control by adjusting thermal gradients based on idling times.

Implementation Method 1

heating a process vessel with a predetermined thermal gradient without loading a process substrate in the process vessel

Methodology Applied
Scientific EffectThermal gradient: Temperature Gradient

Data Source

PatentUS20250210317A1Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
Publication Date: 2025.06.26 KOKUSAI DENKI KK
  • US20250210317A1 patent drawing
  • US20250210317A1 patent drawing
  • US20250210317A1 patent drawing

AI summary

There is provided a technique that includes: (a) heating a process vessel with a predetermined thermal gradient without loading a process substrate in the process vessel; and (b) processing the process substrate after (a) with the process substrate loaded in the process vessel.