Cylindrical Processing Apparatus Gas Nozzle Symmetry

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Solution Overview

Problem

Existing film forming apparatuses face challenges in achieving uniform film thickness distribution across wafers due to variations in gas flow rates and concentrations, leading to inefficiencies in film formation processes.

Innovation Solution

A processing apparatus with a cylindrical processing container and multiple gas nozzles extending vertically along its side wall, symmetrically disposed around a central axis connecting the container's center and the exhaust slit. These gas nozzles eject the same processing gas, allowing for adjustable flow rates to control the concentration distribution of reactive species and thereby adjust the film thickness distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single gas nozzle is used to supply processing gas, then the device complexity is reduced, but the film thickness distribution uniformity deteriorates due to variations in gas flow rates and concentrations

Engineering Contradiction:
Improvegas nozzle configurationVSAvoidfilm thickness distribution uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The single gas nozzle is segmented into multiple nozzles arranged around the processing container. Each nozzle supplies processing gas to a specific region, allowing independent control of gas flow rates and concentrations to achieve uniform film thickness distribution across different wafer positions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the processing container are provided with gas nozzles having different flow rates and gas concentrations according to local requirements. This ensures that each region receives the appropriate gas supply conditions to achieve uniform film formation across the entire wafer surface.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If multiple gas nozzles are used to improve film thickness uniformity, then the manufacturing precision is improved, but the device complexity increases

Engineering Contradiction:
Improvefilm thickness distribution uniformityVSAvoidgas nozzle configuration
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The gas nozzles are asymmetrically configured with different flow rates and gas concentrations according to the specific requirements of different processing regions. This asymmetric design allows optimization of film thickness uniformity while managing device complexity through targeted rather than uniform complexity distribution.

Inventive Principle:
Principle #4Asymmetry

3Productivity

If gas flow rates are increased to improve film formation efficiency, then the productivity is improved, but the film thickness distribution uniformity deteriorates due to excessive gas concentration variations

Engineering Contradiction:
Improvefilm formation efficiencyVSAvoidfilm thickness distribution uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The gas flow rates from different nozzles are dynamically adjusted based on the specific requirements of each processing region. This dynamic control allows the system to maintain high overall productivity while ensuring that each region receives the appropriate gas concentration to achieve uniform film thickness distribution.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The flow rates and gas concentrations from different nozzles are varied as independent parameters to optimize both productivity and film thickness uniformity. By changing these parameters locally rather than uniformly, the system achieves high efficiency while maintaining precision.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus enables precise control over the film thickness distribution by adjusting the flow rate allocation of the processing gas from multiple nozzles, thereby enhancing the uniformity and efficiency of film formation processes.

Implementation Method 1

each configured to eject the same processing gas into the processing container

Methodology Applied
Scientific EffectGas flow:

Implementation Method 2

adjust the flow rate allocation of the processing gas from multiple nozzles, thereby enhancing the uniformity and efficiency of film formation processes

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 3

film formation processes

Methodology Applied
Scientific EffectChemical Vapor Deposition: Chemical Vapour Deposition

Data Source

PatentUS20250066916A1Processing apparatus and processing method
Publication Date: 2025.02.27 TOKYO ELECTRON LTD
  • US20250066916A1 patent drawing
  • US20250066916A1 patent drawing
  • US20250066916A1 patent drawing

AI summary

A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a first pair of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container and disposed symmetrically with respect to a straight line extending from a center of the exhaust slit to a portion of the side wall positioned opposite to the exhaust slit via a center of the processing container; a second pair of gas nozzle disposed symmetrically with respect to the straight line; at least one memory storing executable instructions; and at least one processor configured to execute the executable instructions to: control the first pair of gas nozzles and the second pair of gas nozzles to eject a same processing gas into the processing container.