Vertical Processing Chamber Gas Layout for Uniform Wafer Film Thickness
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Solution Overview
Problem
In film forming processes using batch type vertical heat treatment apparatuses, achieving uniform film thickness across wafers is challenging due to uneven gas distribution, resulting in thinner films at the center compared to the edges.
Innovation Solution
A processing apparatus with a concentration adjustment gas nozzle positioned within a specific angle range relative to the exhaust structure, which ejects inert gas to reduce raw material gas concentration at the wafer edges while maintaining it at the center, using a combination of gas nozzles and an exhaust structure to control gas flow and distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is supplied from the periphery of the wafer toward the center, then the wafer edges receive sufficient raw material gas, but the gas concentration at the center becomes too low resulting in thinner films
Solution Approach 1:
The patent applies local quality by positioning the concentration adjustment gas nozzle specifically at the center region of the processing container to provide localized gas concentration adjustment. This allows the center area to receive additional raw material gas while the periphery maintains its gas supply pattern, creating spatially differentiated gas distribution that resolves the contradiction between edge and center film thickness
Solution Approach 2:
The concentration adjustment gas nozzle acts as an intermediary device that mediates the gas distribution between the periphery gas nozzles and the center region. By introducing gas specifically at the center location, it balances the gas concentration gradient and enables uniform film formation across the entire wafer surface
2Manufacturing precision
If the concentration adjustment gas nozzle is positioned outside the exhaust structure angle range, then the gas flow pattern is simpler, but the film thickness uniformity deteriorates
Solution Approach 1:
The patent transitions from considering only radial gas distribution to incorporating angular positioning as an additional dimension. By specifying the nozzle position within a particular angular range relative to the exhaust structure, the invention creates a three-dimensional positioning strategy (radial + angular + vertical) that optimizes gas flow patterns for uniform film deposition
3Productivity
If gas nozzles are arranged to supply gas uniformly across the wafer, then the device structure becomes more complex, but the film formation efficiency decreases
Solution Approach 1:
The patent segments the gas supply system into two distinct functional zones: periphery gas nozzles for edge region supply and a center concentration adjustment gas nozzle for central region supply. This segmentation allows each zone to be optimized independently, maintaining simple overall structure while achieving uniform gas distribution and high film formation efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for localized reduction of film thickness at the wafer edges while preserving the gas concentration at the center, enabling the formation of films with good in-plane uniformity for patterns with large surface areas.
Implementation Method 1
a concentration adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container
Implementation Method 2
an exhaust structure formed on the side wall on an opposite side of the processing container to face the processing gas nozzle
Implementation Method 3
a processing gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container
Data Source
AI summary
A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.