Processing Film Etching Control for Substrate Surface Layers
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Solution Overview
Problem
Existing substrate processing methods lack precise control over the timing of etching at the surface layer, leading to inaccuracies in etching processes due to the reliance on liquid flow dynamics.
Innovation Solution
A method involving the formation of a processing film on the substrate surface, which is subjected to etching function developing and eliminating processes through heating or pH adjustments to control etching, allowing for precise timing of etching facilitation and reduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etching liquid is supplied to the substrate surface, then etching of the substrate is enabled, but the timing of etching stop is unclear due to reliance on liquid flow dynamics
Solution Approach 1:
The processing liquid undergoes phase transition from liquid to solid film state on the substrate surface. This phase change provides a clear temporal marker: etching starts when the liquid is supplied and stops when the liquid solidifies into a film. The solidification point clearly defines the etching duration, eliminating the uncertainty caused by liquid flow dynamics and enabling precise control of etching timing.
2Manufacturing precision
If processing liquid is supplied to form a processing film, then etching function can be controlled, but additional processing steps are required
Solution Approach 1:
The processing liquid performs multiple functions automatically: it forms a protective film on the substrate, provides etching function during the liquid state, and self-limits the etching duration through self-solidification. The system uses the inherent properties of the processing liquid rather than requiring external control mechanisms, thereby achieving precise etching control without significantly increasing process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances controllability of etching at the surface layer by facilitating or reducing etching based on applied heating or pH changes, enabling accurate and controlled etching processes.
Implementation Method 1
a processing liquid is supplied to a front surface of a substrate and the processing liquid on the front surface of the substrate is solidified or cured, thereby forming a processing film on the front surface of the substrate
Implementation Method 2
The etching function developing processing includes heating strengthening processing of strengthening heating applied to the processing film
Implementation Method 3
the etching function developing processing includes pH-adjusting processing in which a pH-adjusting liquid is supplied to the processing film on the substrate, thereby adjusting the pH in the processing film so as to be acidic or basic
Implementation Method 4
the etching function eliminating processing includes neutralization processing in which a neutralizing liquid is supplied to the processing film on the substrate, thereby bringing the pH in the processing film closer to neutral than the pH in the processing film after the pH-adjusting processing
Data Source
AI summary
A substrate processing method includes a processing film forming step in which a processing liquid is supplied to a front surface of a substrate and the processing liquid on the front surface of the substrate is solidified or cured to form a processing film on the front surface of the substrate, an etching facilitating step in which the processing film is subjected to etching function developing processing, thereby facilitating etching at a surface layer portion of the substrate by the processing film, and an etching reducing step in which the processing film is subjected to etching function eliminating processing, thereby reducing the etching at the surface layer portion of the substrate by the processing film in a state that the processing film is kept on the substrate.