Unified Processor and Heterogeneous Memory Stacking for Low-Crosstalk MCPs
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Solution Overview
Problem
Conventional semiconductor devices face issues with cross-talk and high loading on processors due to soldering NAND memory chips onto PCBs, leading to RC delays and increased PCB area, especially when heterogeneous memories are needed, and cache size occupies significant chip real estate, affecting performance.
Innovation Solution
A unified semiconductor device integrates a processor core, cache, and heterogeneous memories (DRAM and NAND) in a multi-chip package with short-distance vertical metal interconnects, reducing bus interface units and utilizing a hybrid controller for efficient data transfer and storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If NAND memory chips are soldered onto PCBs, then memory storage capacity is improved, but RC delays and cross-talk increase
Solution Approach 1:
The patent transitions from traditional planar PCB mounting to three-dimensional stacked architecture, where memory chips are vertically stacked and bonded to the processor chip through multiple bonding interfaces. This dimensional change shortens signal paths and eliminates long PCB traces, thereby reducing RC delays and cross-talk while maintaining high storage capacity.
Solution Approach 2:
The patent merges the processor chip and memory chips into a unified bonded chip structure through direct bonding technology. Multiple chips (processor, DRAM, NAND, SRAM) are integrated into a single package with short-distance vertical interconnects, eliminating the need for separate PCB mounting and reducing signal transmission distance, thus improving signal quality while maintaining storage capacity.
2Productivity
If heterogeneous memories are integrated, then memory performance is improved, but PCB area increases
Solution Approach 1:
The patent employs three-dimensional stacking to integrate heterogeneous memories (DRAM, NAND, SRAM) vertically above the processor chip. This vertical integration approach consolidates multiple memory types and the processor into a compact bonded chip package, dramatically reducing the PCB footprint while maintaining high memory performance through short interconnect paths.
Solution Approach 2:
The patent implements a nested architecture where memory chips are stacked and bonded directly onto the processor chip, forming a hierarchical structure. The processor chip serves as the base, with DRAM, NAND, and SRAM chips nested vertically above it, creating a space-efficient integrated package that minimizes PCB area occupation.
3Productivity
If cache size is increased, then processor performance is improved, but chip real estate is consumed
Solution Approach 1:
The patent moves the cache memory from the traditional planar layout on the processor chip to a vertical stacking architecture. SRAM cache is implemented as a separate chip stacked and bonded above the processor chip, enabling larger cache capacity without consuming additional processor die area. This three-dimensional approach allows the processor to maintain full chip real estate for computation while providing expanded cache through vertical integration.
Solution Approach 2:
The patent segments the cache memory into a separate bonded chip structure rather than integrating it entirely on the processor die. This segmentation allows independent optimization of the processor chip area for computational functions while providing scalable cache capacity through additional stacked memory chips, effectively decoupling processor performance from chip area constraints.
Data Source
AI summary
A semiconductor device in a multi-chip package (MCP) includes a controller, at least one non-volatile memory die including an array of non-volatile memory cells and connected to the controller through wire bonding, and at least one volatile memory die including an array of volatile memory cells and connected to the controller through wire bonding. The controller is configured to control operations of the at least one non-volatile memory die and the at least one volatile memory die.


